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在金属衬底上生长ZnO薄膜的方法 专利
专利类型: 发明, 申请日期: 2009-03-18, 公开日期: 2009-06-04, 2009-06-11
Inventors:  崔军朋;  段垚;  王晓峰;  曾一平
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在Si衬底上生长ZnO薄膜的方法 专利
专利类型: 发明, 申请日期: 2009-03-18, 公开日期: 2009-06-04, 2009-06-11
Inventors:  崔军朋;  段垚;  王晓峰;  曾一平
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氧化物的化学气相沉积制备装置及制备方法 专利
专利类型: 发明, 申请日期: 2009-01-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  段垚;  王晓峰;  崔军朋;  曾一平
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高纯氧化锌的化学气相沉积装置及其制备方法 专利
专利类型: 发明, 申请日期: 2008-09-24, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓峰;  段垚;  崔军朋;  曾一平
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Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 6, 页码: 2277-2280
Authors:  Cui, JP;  Wang, XF;  Duan, Y;  He, JX;  Zeng, YP;  Cui, JP, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: ypzeng@red.semi.ac.cn
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Thin-films  Bulk Zno  Scattering  Pressure  
Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 12, 页码: 1542-1544
Authors:  Cui JP;  Duan Y;  Wang XF;  Zeng YP;  Cui JP Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: jpcui@semi.ac.cn
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Zno Film  Strain Status  Gan Buffer Layer  Sapphire  Mvpe  
A new technique for boosting efficiency of silicon solar cells 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2005, 卷号: 86, 期号: 4, 页码: 585-591
Authors:  Li JM;  Chong M;  Yang LQ;  Xu JD;  Duan XF;  Gao M;  Wang FL;  Liu HT;  Bian L;  Chi X;  Zhai YH;  Li, JM, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jml@red.semi.ac.cn
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Silicon  
提高半导体光电转换器件性能的方法 专利
专利类型: 发明, 申请日期: 2004-08-18, 公开日期: 2009-06-04, 2009-06-11
Inventors:  李建明;  种明;  杨丽卿;  徐嘉东;  胡传贤;  段晓峰;  高旻;  朱建成;  王凤莲
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A V-shaped module technique for promoting generation photocurrent density of silicon solar cells 会议论文
FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, MAY 31-JUN 02, 2004
Authors:  Li, JM;  Chong, M;  Duan, XF;  Xu, JD;  Gao, M;  Wang, FL;  Li, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Silicon  Solar Cells  V-shaped Structure  
Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN 期刊论文
JOURNAL OF MATERIALS SCIENCE LETTERS, 2003, 卷号: 22, 期号: 22, 页码: 1581-1583
Authors:  Hu GQ;  Kong X;  Wang YQ;  Wan L;  Duan XF;  Lu Y;  Liu XL;  Hu GQ,Chinese Acad Sci,Inst Phys,Beijing Lab Electron Microscopy,POB 603,Beijing 100080,Peoples R China.
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Molecular-beam Epitaxy  High-quality Gan  Heteroepitaxial Growth  Heterostructures