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Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
Authors:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 20, 页码: 4149-4151
Authors:  Zheng XH;  Jiang DS;  Johnson S;  Zhang YH;  Zheng XH,Chinese Acad Sci,Inst Phys,POB 603,Beijing 100080,Peoples R China.
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1.3-mu-m Vcsels  Gaas  Superlattices  
Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 8, 页码: 1203-1206
Authors:  Liang XG;  Jiang DS;  Bian LF;  Pan Z;  Li LH;  Wu RH;  Liang XG,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(239Kb)  |  Favorite  |  View/Download:956/228  |  Submit date:2010/08/12
Band  Luminescence  Gaas  Localization  Emission  Behavior  Shift  Ingan  
The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 2, 页码: 261-266
Authors:  Liang XG;  Jiang DS;  Sun BQ;  Bian LF;  Pan Z;  Li LH;  Wu RH;  Liang XG,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(137Kb)  |  Favorite  |  View/Download:1261/315  |  Submit date:2010/08/12
Photoluminescence  Molecular Beam Epitaxy  Quantum Wells  Iii-v Semiconductors  Molecular-beam Epitaxy  Single-quantum-well  Luminescence  Gaas  Localization  Behavior  Layer  
Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
Authors:  Jiang DS;  Liang XG;  Chang K;  Bian LF;  Sun BQ;  Wang JB;  Johnson S;  Zhang Y;  Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
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Lasers  Gain  Gaas  
Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 15, 页码: 2217-2219
Authors:  Pan Z;  Li LH;  Lin YW;  Sun BQ;  Jiang DS;  Ge WK;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Ingaasn  Laser  Operation  Alloys  Growth  Gaas  
Excitation transfer in vertically self-organized pairs of unequal-sized InAs/GaAs quantum dots 期刊论文
CHINESE PHYSICS LETTERS, 2000, 卷号: 17, 期号: 8, 页码: 615-616
Authors:  Wang HL;  Feng SL;  Yang FH;  Sun BQ;  Jiang DS;  Wang HL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
Adobe PDF(212Kb)  |  Favorite  |  View/Download:771/198  |  Submit date:2010/08/12
Growth  Gaas  Photoluminescence  Luminescence  Relaxation  Gaas(100)  Islands  
Strain effect on the band structure of InAs/GaAs quantum dots 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 卷号: 38, 期号: 11, 页码: 6264-6265
Authors:  Zhu HJ;  Feng SL;  Jiang DS;  Deng YM;  Wang HL;  Zhu HJ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(62Kb)  |  Favorite  |  View/Download:1840/857  |  Submit date:2010/08/12
Inas/gaas  Quantum Dots  Photoluminescence  Band Structure  Gaas  Relaxation  Temperature  
Effect of dopant on the uniformity of InAs self-organized quantum dots 期刊论文
ACTA PHYSICA SINICA-OVERSEAS EDITION, 1999, 卷号: 8, 期号: 8, 页码: 624-628
Authors:  Wang HL;  Zhu HJ;  Feng SL;  Ning D;  Wang H;  Wang XD;  Jiang DS;  Wang HL,Chinese Acad Sci,Natl Lab Superlattices & Microstruct,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(148Kb)  |  Favorite  |  View/Download:887/241  |  Submit date:2010/08/12
Infrared-absorption  Growth  Gaas  
Double crystal X-ray diffraction study of MBE self-organized InAs quantum dots 期刊论文
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 1998, 卷号: 41, 期号: 2, 页码: 172-176
Authors:  Wang YT;  Zhuang Y;  Ma WQ;  Wang W;  Yang XP;  Chen ZG;  Jiang DS;  Zheng HZ;  Wang YT,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(313Kb)  |  Favorite  |  View/Download:1005/341  |  Submit date:2010/08/12
Quantum Dots  X-ray Diffraction  Growth  Dynamic Theory  Photoluminescence  Molecular-beam Epitaxy  Resolution  Gaas(100)  Gaas