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The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
Authors:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Luminescence  Localization  
Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 8, 页码: 1203-1206
Authors:  Liang XG;  Jiang DS;  Bian LF;  Pan Z;  Li LH;  Wu RH;  Liang XG,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(239Kb)  |  Favorite  |  View/Download:930/228  |  Submit date:2010/08/12
Band  Luminescence  Gaas  Localization  Emission  Behavior  Shift  Ingan  
The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 2, 页码: 261-266
Authors:  Liang XG;  Jiang DS;  Sun BQ;  Bian LF;  Pan Z;  Li LH;  Wu RH;  Liang XG,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(137Kb)  |  Favorite  |  View/Download:1212/315  |  Submit date:2010/08/12
Photoluminescence  Molecular Beam Epitaxy  Quantum Wells  Iii-v Semiconductors  Molecular-beam Epitaxy  Single-quantum-well  Luminescence  Gaas  Localization  Behavior  Layer