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Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 6, 页码: 3762-3764
Authors:  Xu DP;  Wang YT;  Yang H;  Li SF;  Zhao DG;  Fu Y;  Zhang SM;  Wu RH;  Jia QJ;  Zheng WL;  Jiang XM;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Nitride Semiconductors  Stress  
Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 209, 期号: 4, 页码: 648-652
Authors:  Pan Z;  Li LH;  Lin YW;  Zhou ZQ;  Zhang W;  Wang YT;  Wu RH;  Pan Z,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,POB 912,Beijing 100083,Peoples R China.
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Ganas/gaas Superlattice  X-ray Diffraction  Periodicity Fluctuation  Mbe  Rheed  Band-gap Energy  Nitrogen  Alloys  Diffraction  Coefficient  Solubility  Operation  Gaas1-xnx  Gaasn  
Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 87, 期号: 8, 页码: 3711-3714
Authors:  Sun XL;  Wang YT;  Yang H;  Zheng LX;  Xu DP;  Li JB;  Wang ZG;  Sun XL,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Phase-separation  Gan  
Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 212, 期号: 3-4, 页码: 397-401
Authors:  Sun XL;  Yang H;  Wang YT;  Zheng LX;  Xu DP;  Zhao DG;  Li SF;  Wang ZG;  Sun XL,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Iii-v Semiconductor Mocvd Rheed  Xrdcd  Sapphire  
Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching 期刊论文
THIN SOLID FILMS, 2000, 卷号: 372, 期号: 1-2, 页码: 25-29
Authors:  Xu D;  Yang H;  Zhang SM;  Zheng LX;  Zhao DG;  Li SF;  Wang YT;  Wu RH;  Xu D,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Light-emitting-diodes  Yellow Luminescence  Growth  Heterostructure  Nitride  
X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32
Authors:  Pan Z;  Wang YT;  Li LH;  Zhang W;  Lin YW;  Zhou ZQ;  Wu RH;  Pan Z,Chinese Acad Sci,State Key Lab Integrated Optoelect,Natl Res Ctr Optoelect Technol,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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X-ray Diffraction  Strain Relaxation  Ganxas1-x/gaas  Photoluminescence  Rheed  Molecular-beam Epitaxy  Temperature Pulsed Operation  Band-gap Energy  Nitrogen  Gaasn  Ganxas1-x  Gaas1-xnx  Alloys  Lasers  Layers  
Cubic InGaN grown by MOCVD 期刊论文
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 卷号: 4, 期号: 0, 页码: Art.No.G3.25
Authors:  Li JB;  Yang H;  Zheng LX;  Xu DP;  Wang YT;  Li JB,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Gallium Nitride  Gan  Gaas  
Effect of Si doping on cubic GaN films grown on GaAs(100) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 206, 期号: 1-2, 页码: 150-154
Authors:  Xu DP;  Yang H;  Li JB;  Li SF;  Wang YT;  Zhao DG;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Gan  Cubic  Hexagonal  Photoluminescence  Doped Gan  Xrd  Silicon  Light-emitting Diodes  Semiconductors  Sapphire  
Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 203, 期号: 1-2, 页码: 40-44
Authors:  Xu DP;  Yang H;  Zhao DG;  Li JB;  Zheng LX;  Wang YT;  Li SF;  Duan LH;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
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Algan  Cubic  Hexagonal  Sem  Gaas  Movpe  Gan  
Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction 期刊论文
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 1999, 卷号: 42, 期号: 5, 页码: 517-522
Authors:  Xu DP;  Wang YT;  Yang H;  Zheng LX;  Li JB;  Duan LH;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100083,Peoples R China.
Adobe PDF(335Kb)  |  Favorite  |  View/Download:970/298  |  Submit date:2010/08/12
Cubic Gan  Hexagonal  X-ray Diffraction  Substrate Nitridation  Mocvd  Optical-properties  Molecular-beam Epitaxy  Gan  Gaas  Growth