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Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 11, 页码: 118503
Authors:  Li B (Li Bin);  Yang HW (Yang Huai-Wei);  Gui Q (Gui Qiang);  Yang XH (Yang Xiao-Hong);  Wang J (Wang Jie);  Wang XP (Wang Xiu-Ping);  Liu SQ (Liu Shao-Qing);  Han Q (Han Qin)
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High stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 1, 页码: 18502
Authors:  Wang, J;  Han, Q;  Yang, XH;  Ni, HQ;  He, JF;  Wang, XP
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Direct Observation of Inhomogeneous Solid Electrolyte Interphase on MnO Anode with Atomic Force Microscopy and Spectroscopy 期刊论文
NANO LETTERS, 2012, 卷号: 12, 期号: 4, 页码: 2153-2157
Authors:  Zhang, J;  Wang, R;  Yang, XC;  Lu, W;  Wu, XD;  Wang, XP;  Li, H;  Chen, LW
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Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 2, 页码: Article no.20703
Authors:  Wang XP;  Yang XH;  Han Q;  Ju YL;  Du Y;  Zhu B;  Wang J;  Ni HQ;  He JF;  Wang GW;  Niu ZC;  Wang, XP, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. xpwang@semi.ac.cn
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V-groove Substrate  Quantum Wires  Gaas  Epitaxial-growth  Transistor  
Metal electrode influence on the wet selective etching of GaAs/AlGaAs 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 卷号: 29, 期号: 4, 页码: 41208
Authors:  Wang J;  Han Q;  Yang XH;  Wang XP;  Ni HQ;  He JF;  Wang, J (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China, hanqin@semi.ac.cn
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Hydrogen-peroxide Solutions  Iii-v Semiconductors  Pseudomorphic Modfets  Gaas  Fabrication  Transistor  Algaas  
High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 20, 页码: Article no.201104
Authors:  Liu SQ;  Han Q;  Zhu B;  Yang XH;  Ni HQ;  He JF;  Wang X;  Li MF;  Zhu Y;  Wang J;  Wang XP;  Niu ZC;  Liu, SQ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. sqliu@semi.ac.cn;  hanqin@red.semi.ac.cn
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I-n Photodiodes  
Optically controlled quantum dot gated transistors with high on/off ratio 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 8, 页码: Art. No. 083503
Authors:  Yang XH (Yang Xiaohong);  Xu XL (Xu Xiulai);  Wang XP (Wang Xiuping);  Ni HQ (Ni Haiqiao);  Han Q (Han Qin);  Niu ZC (Niu Zhichuan);  Williams DA (Williams David A.);  Yang, XH, Cavendish Lab, Hitachi Cambridge Lab, JJ Thompson Ave, Cambridge CB3 0HE, England.E-mail Address: xhyang@red.semi.ac.cn
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Iii-v Semiconductors  Indium Compounds  Laser Beam Applications  Nanoelectronics  Photoelectric Devices  Photoelectricity  Phototransistors  Semiconductor Quantum Dots  I-n Junctions  
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 5, 页码: Art. No. 057802
Authors:  Zhao DG (Zhao De-Gang);  Zhang S (Zhang Shuang);  Liu WB (Liu Wen-Bao);  Hao XP (Hao Xiao-Peng);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Wei L (Wei Long);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Ga Vacancies  Mocvd  Gan  Schottky Barrier Photodetector  Reverse-bias Leakage  Molecular-beam Epitaxy  P-n-junctions  Positron-annihilation  Diodes  Films  
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 3, 页码: Art. No. 038504
Authors:  Zhu B (Zhu Bin);  Han Q (Han Qin);  Yang XH (Yang Xiao-Hong);  Ni HQ (Ni Hai-Qiao);  He JF (He Ji-Fang);  Niu ZC (Niu Zhi-Chuan);  Wang X (Wang Xin);  Wang XP (Wang Xiu-Ping);  Wang J (Wang Jie);  Zhu, B, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: zhubin@semi.ac.cn
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Molecular-beam Epitaxy  Buffer Layers  Dark Current  Photodiodes  Lasers  
一种恒温装置及其控制方法 专利
专利类型: 发明, 申请日期: 2009-03-11, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张日清;  刘祥林;  杨少延;  张晓沛;  董向芸
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