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减小表面态影响的氮化镓基MSM结构紫外探测器 专利
专利类型: 发明, 申请日期: 2006-12-13, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵德刚;  杨辉
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PIN结构氮化镓基紫外探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2006-03-15, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵德刚;  杨辉
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PIXE analysis of Fe content in Fe-implanted GaN film 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 卷号: 252, 期号: 2, 页码: 225-229
Authors:  Zhang B;  Shi LQ;  Chen CC;  Zhao DG;  Zhang, B, Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China. 电子邮箱地址: binzhang@fudan.edu.cn
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Pixe  
Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 4, 页码: Art.No.041903
Authors:  Wang YJ;  Xu SJ;  Li Q;  Zhao DG;  Yang H;  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
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Photoluminescence  Luminescence  
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 8, 页码: Art.No.083123
Authors:  Xu SJ;  Li GQ;  Wang YJ;  Zhao Y;  Chen GH;  Zhao DG;  Zhu JJ;  Yang H;  Yu DP;  Wang JN;  Xu, SJ, Univ Hong Kong, Joint Lab New Mat, CAS, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
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Luminescence  Temperature  Model  
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 1, 页码: 72-75
Authors:  Zhao DG;  Zhu JJ;  Jiang DS;  Yang H;  Liang JW;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Growth Rate  Parasitic Reaction  Mocvd  Aln  Gas-phase Reactions  Movpe Growth  Algan Movpe  Alxga1-xn  
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 24, 页码: Art.No.241917
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  Molecular-beam Epitaxy  X-ray-diffraction  Mg-doped Gan  Undoped Gan  Photoluminescence Bands  Threading Dislocations  Positron-annihilation  Growth Stoichiometry  Gallium Nitride  
高量子效率前照式GaN基p-i-n结构紫外探测器 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 5, 页码: 896-899
Authors:  游达;  汤英文;  赵德刚;  许金通;  徐运华;  龚海梅
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Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 499-505
Authors:  Li Deyao;  Huang Yongzhen;  Zhang Shuming;  Zhong Ming;  Ye Xiaojun;  Zhu Jianjun;  Zhao Degang;  Chen Lianghui;  Yang Hui;  Liang Junwu
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空间用紫外探测及AlGaN探测器的研究进展 期刊论文
激光与红外, 2006, 卷号: 36, 期号: 11, 页码: 1009-1012
Authors:  张燕;  龚海梅;  白云;  陈亮;  许金通;  汤英文;  游达;  赵德刚;  郭丽伟;  李向阳
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