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Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Wang, XH;  Wang, XL;  Xiao, HL;  Feng, C;  Wang, XY;  Wang, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)  |  收藏  |  浏览/下载：1876/329  |  提交时间：2010/03/09
Gas Sensors  Hemt Structures  Mobility  Temperature  Transistors  Growth  Mocvd  Layer  
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, FW;  Gao, HY;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Yan, FW, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(1746Kb)  |  收藏  |  浏览/下载：2904/891  |  提交时间：2010/03/09
Gan  Mocvd  Led  Nano-pattern  Sem  Hrxrd  Pl  
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, JC;  Wang, JX;  Liu, NX;  Liu, Z;  Li, JM;  Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(471Kb)  |  收藏  |  浏览/下载：2008/557  |  提交时间：2010/03/09
Algan  Gan Template  A1n Interlayer  Mocvd  Crack  Interference Fringes  
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Zhang, Y;  Yan, FW;  Gao, HY;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(929Kb)  |  收藏  |  浏览/下载：3607/1292  |  提交时间：2010/03/09
Gan  Nitrides  Led  Mocvd  Patterned Sapphire Substrate  Wet Etching  
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Shen, WJ;  Duan, Y;  Wang, J;  Wang, QY;  Zeng, YP;  Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)  |  收藏  |  浏览/下载：1676/615  |  提交时间：2010/03/29
Zno  Mocvd  Thermal Annealing  Photoluminescence  X-ray Diffraction  Atomic Force Microscopy  Pulsed-laser Deposition  Thin-films  Photoluminescence  Mechanisms  Epitaxy  Cvd  Si  
Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 会议论文
FERROELECTRICS, 271, MADRID, SPAIN, SEP 03-07, 2001
作者:  Wang H;  Shang SX;  Yao WF;  Hou Y;  Xu XH;  Wang D;  Wang M;  Yu JZ;  Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China.
Adobe PDF(1640Kb)  |  收藏  |  浏览/下载：1036/178  |  提交时间：2010/11/15
Bi2ti2o7  Thin Film  Mocvd  (111) Orientation  Chemical-vapor-deposition  Crystal Thin-films  
MOCVD growth of cubic GaN: Materials and devices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Yang H;  Zhang SM;  Xu DP;  Li SF;  Zhao DG;  Fu Y;  Sun YP;  Feng ZH;  Zheng LX;  Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(380Kb)  |  收藏  |  浏览/下载：1486/238  |  提交时间：2010/10/29
Mocvd  Gan  Ingan  Cubic  Led  Chemical-vapor-deposition  Molecular-beam Epitaxy  Gallium Nitride  Phase Epitaxy  Ingan Films  Electroluminescence  Zincblende  Wurtzite  Mbe  
Tunable MQW-DBR lasers using selective area growth 会议论文
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086, SHANGHAI, PEOPLES R CHINA, MAY 08-11, 2000
作者:  Liu GL;  Wang W;  Zhang JY;  Chen WX;  Xu GY;  Zhang BJ;  Zhou F;  Wang XJ;  Zhu HL;  Liu GL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(199Kb)  |  收藏  |  浏览/下载：1543/418  |  提交时间：2010/10/29
Selective Area Growth  Multi-quantum-well  Distributed Bragg Reflector Laser  Mocvd  Tunable Laser  Epitaxy  
650nm AlGaInP quantum well lasers for the application of DVD 会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:  Chen LH;  Ma XY;  Guo L;  Ma J;  Ding HY;  Cao Q;  Wang LM;  Zhang GZ;  Yang YL;  Wang GH;  Tan MQ;  Chen LH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1392/409  |  提交时间：2010/10/29
Dvd  Laser Diode  Visible  Algainp  Mocvd  Operation  Diodes  
Growth of Fe doped semi-insulating InP by LP-MOCVD 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yan XJ;  Zhu HL;  Wang W;  Xu GY;  Zhou F;  Ma CH;  Wang XJ;  Tian HL;  Zhang JY;  Wu RH;  Wang QM;  Yan XJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(536Kb)  |  收藏  |  浏览/下载：1563/496  |  提交时间：2010/10/29
Semi-insulating  Fe-doped  Mocvd