Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K

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	Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K
	Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM; Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
	2008
会议名称	Conference on Solid State Lighting and Solar Energy Technologies
会议录名称	SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
页码	6841: K8410-K8410
会议日期	NOV 12-14, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-7016-4
部门归属	[yan, jianchang; wang, junxi; liu, naixin; liu, zhe; li, jinmin] chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china
摘要	AlxGa1-xN layer was grown on sapphire substrate with GaN template by Metal Organic Chemical Vapor Deposition system (MOCVD). High temperature A1N (HT-A1N) interlayer was inserted between AlxGa1-xN layer and GaN template to solve the cracking problem that often appears on AlxGa1-xN surface when directly grown on high temperature GaN template. Optical microscope, scanning electron microscopy (SEM), atomic force microscope (AFM), high resolution x-ray diffraction (HRXRD) and cathodoluminescence (CL) were used for characterization. It was found that the cracking was successfully eliminated. Furthermore, the crystalline quality of AlxGa1-xN layer with HT-A1N interlayer was much improved. Interference fringes were found in the HRXRD images. CL test showed that yellow emission was much reduced for AlGaN layer with HT-A1N interlayer.
关键词	Algan Gan Template A1n Interlayer Mocvd Crack Interference Fringes
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7826
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Yan, JC,Wang, JX,Liu, NX,et al. Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6841: K8410-K8410.

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