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Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
Authors:  Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong
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大功率及高转换效率2.1μm GaInSb/AlGaAsSb量子阱激光器 期刊论文
红外与激光工程, 2016, 卷号: 45, 期号: 5, 页码: 66-70
Authors:  宋玉志;  宋甲坤;  张祖银;  李康文;  徐云;  宋国峰;  陈良惠
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可集成的硅基光互连技术研究 期刊论文
科技创新导报, 2016, 期号: 8, 页码: 173-174
Authors:  宋国峰;  冯雪;  黄北举;  薛春来;  韦欣
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Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography 期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 卷号: 14, 期号: 1, 页码: 413-417
Authors:  Qiao, YB;  Feng, SW;  Xiong, C;  Zhu, H
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Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 68, 期号: 1, 页码: 10105
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Yan, JD;  Peng, EC;  Kang, H;  Wang, ZG;  Hou, X
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Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 66, 期号: 2, 页码: 20101
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Hou, X;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Peng, EC;  Kang, H;  Wang, ZG
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Cycled Thermomechanical Failure in 808-nm High-Power AlGaAs/GaAs Laser Diode Bars 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 卷号: 61, 期号: 8, 页码: 2854-2858
Authors:  Qiao, YB;  Feng, SW;  Zhang, GC;  Xiong, C;  Zhu, H;  Guo, CS
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Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet 期刊论文
CHINESE SCIENCE BULLETIN, 2014, 卷号: 59, 期号: 16, 页码: 1903-1906
Authors:  Zeng, C;  Zhang, SM;  Liu, JP;  Li, DY;  Jiang, DS;  Feng, MX;  Li, ZC;  Zhou, K;  Wang, F;  Wang, HB;  Wang, H;  Yang, H
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Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 5, 页码: 054502
Authors:  Yan, JD;  Wang, XL;  Wang, Q;  Qu, SQ;  Xiao, HL;  Peng, EC;  Kang, H;  Wang, CM;  Feng, C;  Yin, HB;  Jiang, LJ;  Li, BQ;  Wang, ZG;  Hou, X
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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 6, 页码: 068502
Authors:  Kang, H;  Wang, Q;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Wang, XL;  Wang, ZG;  Hou, X
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