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Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with 期刊论文
AIP Advances, 2016, 卷号: 6, 页码: 055201
Authors:  Dongxue Wu;  Ping Ma;  Boting Liu;  Shuo Zhang;  Junxi Wang;  Jinmin Li
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High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition 期刊论文
AIP Advances, 2016, 卷号: 6, 期号: 6, 页码: 065301
Authors:  Shuo Zhang;  Ping Ma;  Boting Liu;  Dongxue Wu;  Yuliang Huang;  Junxi Wang;  Jinmin Li
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无权访问的条目 期刊论文
Authors:  zhenaigong;  Ping Ma;  Yonghui Zhang;  Enqing Guo;  Yingdong Tian;  Boting Liu;  Shikuan Guo;  Liang Shan;  Junxi Wang;  Jinmin Li
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Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 21, 页码: A1596-A1603
Authors:  Yu, Zhi-Guo;  Zhao, Li-Xia;  Wei, Xue-Cheng;  Lu, Hong-Xi;  Wang, Jun-Xi;  Zeng, Yi-Ping;  Li, Jin-Min;  Sun, Xue-Jiao;  An, Ping-Bo;  Zhu, Shi-Chao;  Liu, Lei;  Tian, Li-Xin;  Zhang, Feng
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Fabrication, morphology and mechanical properties of Al2O3-Al graded coatings on China low activation martensitic steel substrates 期刊论文
Surface and Interface Analysis, 2011
Authors:  Song, Binbin;  Wu, Ping;  Chen, Sen;  Zhang, Shiping;  Yan, Dan;  Xue, Lian;  Wu, P.(pingwu@sas.ustb.edu.cn)
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Adhesion  Auger Electron Spectroscopy  Fabrication  Hardness  Magnetron Sputtering  Martensitic Steel  Morphology  Nanoindentation  Protective Coatings  Scanning Electron Microscopy  Silicon Wafers  x Ray Photoelectron Spectroscopy  
平行四边形GaN基发光二极管芯片的对称电极 专利
专利类型: 发明, 专利号: CN201010113804.4, 公开日期: 2011-08-31
Inventors:  孙莉莉;  闫发旺;  张会肖;  王军喜;  王国宏;  曾一平;  李晋闽
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利用三维极化感应空穴气提高LED发光效率的方法 专利
专利类型: 发明, 专利号: CN201010119349.9, 公开日期: 2011-08-31
Inventors:  张连;  丁凯;  王军喜;  段瑞飞;  曾一平;  李晋闽
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全侧壁锯齿状粗化发光二极管芯片的制备方法 专利
专利类型: 发明, 专利号: CN201010113819.0, 公开日期: 2011-08-31
Inventors:  闫发旺;  孙莉莉;  张会肖;  伊晓燕;  王军喜;  王国宏;  曾一平;  李晋闽
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采用离子注入制备非极性GaN基稀磁半导体材料的方法 专利
专利类型: 发明, 专利号: CN201010201489.0, 公开日期: 2011-08-31
Inventors:  孙莉莉;  闫发旺;  张会肖;  王军喜;  王国宏;  曾一平;  李晋闽
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采用MOCVD制备非极性GaN基稀磁半导体材料的方法 专利
专利类型: 发明, 专利号: CN201010201505.6, 公开日期: 2011-08-31
Inventors:  孙莉莉;  闫发旺;  张会肖;  王军喜;  王国宏;  曾一平;  李晋闽
Adobe PDF(325Kb)  |  Favorite  |  View/Download:1256/280  |  Submit date:2011/08/31