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无权访问的条目 学位论文
Authors:  刘波亭
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Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with 期刊论文
AIP Advances, 2016, 卷号: 6, 页码: 055201
Authors:  Dongxue Wu;  Ping Ma;  Boting Liu;  Shuo Zhang;  Junxi Wang;  Jinmin Li
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High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition 期刊论文
AIP Advances, 2016, 卷号: 6, 期号: 6, 页码: 065301
Authors:  Shuo Zhang;  Ping Ma;  Boting Liu;  Dongxue Wu;  Yuliang Huang;  Junxi Wang;  Jinmin Li
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无权访问的条目 期刊论文
Authors:  zhenaigong;  Ping Ma;  Yonghui Zhang;  Enqing Guo;  Yingdong Tian;  Boting Liu;  Shikuan Guo;  Liang Shan;  Junxi Wang;  Jinmin Li
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氮化镓系发光二极管及制备方法 专利
专利类型: 发明, 公开日期: 2014-02-12
Inventors:  马平;  刘波亭;  甄爱功;  郭仕宽;  纪攀峰;  王军喜;  李晋闽
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一种白光发光二极管及其制作方法 专利
专利类型: 发明, 公开日期: 2013-06-05
Inventors:  马平;  甄爱功;  刘波亭;  王军喜;  李晋闽
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Si衬底上GaN薄膜的生长方法及复合GaN薄膜 专利
专利类型: 发明, 公开日期: 2016-09-22
Inventors:  刘波亭;  马平;  郭仕宽;  甄爱功;  张烁;  吴冬雪;  王军喜;  李晋闽
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具有氮化镓系高阻层的HEMT及制备方法 专利
专利类型: 发明, 公开日期: 2016-09-22
Inventors:  张烁;  马平;  郭仕宽;  刘波亭;  李晋闽;  王军喜
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