| High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition | |
| Shuo Zhang; Ping Ma; Boting Liu; Dongxue Wu; Yuliang Huang; Junxi Wang; Jinmin Li | |
| 2016 | |
| Source Publication | AIP Advances
 |
| Volume | 6Issue:6Pages:065301 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Date Available | 2017-03-16 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28108 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Shuo Zhang,Ping Ma,Boting Liu,et al. High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition[J]. AIP Advances,2016,6(6):065301. |
| APA | Shuo Zhang.,Ping Ma.,Boting Liu.,Dongxue Wu.,Yuliang Huang.,...&Jinmin Li.(2016).High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition.AIP Advances,6(6),065301. |
| MLA | Shuo Zhang,et al."High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition".AIP Advances 6.6(2016):065301. |
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| High-resistive layer（1088KB） | 限制开放 | License | Application Full Text | |||
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