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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates
期刊论文
IEEE PHOTONICS JOURNAL, 2014, 卷号: 6, 期号: 6, 页码: 8200610
Authors:
Wei, Tongbo
;
Zhang, Lian
;
Ji, Xiaoli
;
Wang, Junxi
;
Huo, Ziqiang
;
Sun, Baojun
;
Hu, Qiang
;
Wei, Xuecheng
;
Duan, Ruifei
;
Zhao, Lixia
;
Zeng, Yiping
;
Li, Jinmin
Adobe PDF(1297Kb)
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View/Download:665/150
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Submit date:2015/03/19
Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods
期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 114006
Authors:
An Tielei
;
Sun Bo
;
Wei Tongbo
;
Zhao Lixia
;
Duan Ruifei
;
Liao Yuanxun
;
Li Jinmin
;
Yi Futing
Adobe PDF(170Kb)
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View/Download:598/118
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Submit date:2014/04/30
Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots
期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 13, 页码: 131101
Authors:
Ma J (Ma, Jun)
;
Ji XL (Ji, Xiaoli)
;
Wang GH (Wang, Guohong)
;
Wei XC (Wei, Xuecheng)
;
Lu HX (Lu, Hongxi)
;
Yi XY (Yi, Xiaoyan)
;
Duan RF (Duan, Ruifei)
;
Wang JX (Wang, Junxi)
;
Zeng YP (Zeng, Yiping)
;
Li JM (Li, Jinmin)
;
Yang FH (Yang, Fuhua)
;
Wang C (Wang, Chao)
;
Zou G (Zou, Gang)
Adobe PDF(1367Kb)
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View/Download:1636/539
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Submit date:2013/03/27
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 141-145
Authors:
Wei TB
;
Yang JK
;
Hu Q
;
Duan RF
;
Huo ZQ
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
;
Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
Adobe PDF(1157Kb)
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View/Download:1691/473
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Submit date:2011/07/05
Cl
Pl
Stacking Fault
Hvpe
Gan
Nonpolar
Chemical-vapor-deposition
Acceptor Pair Emission
Phase Epitaxy
Grown Gan
Semiconductors
Sapphire
Films
Nitride
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
期刊论文
Materials Science in Semiconductor Processing, 2011
Authors:
Hu, Qiang
;
Wei, Tongbo
;
Duan, Ruifei
;
Yang, Jiankun
;
Huo, Ziqiang
;
Zeng, Yiping
;
Xu, Shu
;
Hu, Q.(huqiang@semi.ac.cn)
Adobe PDF(594Kb)
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View/Download:1269/391
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Submit date:2012/06/14
Carrier Concentration
Etching
Gallium Alloys
Optical Properties
Point Defects
Raman Spectroscopy
Semiconducting Gallium Compounds
Vapor Phase Epitaxy
Vapors
金属有机物化学气相沉积装置
专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-24, 2010-08-12
Inventors:
段瑞飞
;
王军喜
;
王国宏
;
曾一平
;
李晋闽
Adobe PDF(435Kb)
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View/Download:1990/550
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Submit date:2010/08/12
Preparation and Optical Performance of Freestanding GaN Thick Films
期刊论文
RARE METAL MATERIALS AND ENGINEERING, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
Authors:
Hu QA
;
Wei TB
;
Duan RF
;
Yang JK
;
Huo ZQ
;
Lu TC
;
Zeng YP
;
Hu, QA, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. huqiang@semi.ac.cn
Adobe PDF(873Kb)
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View/Download:1255/381
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Submit date:2011/07/05
Gan
Hvpe
Freestanding Thick Films
Stress Release
Photoluminescence
Vapor-phase Epitaxy
Growth
Pressure
Hvpe
自支撑GaN厚膜制备及其光学性能研究
期刊论文
稀有金属材料与工程, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
Authors:
胡强
;
魏同波
;
段瑞飞
;
羊建坤
;
霍自强
;
卢铁城
;
曾一平
Adobe PDF(328Kb)
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View/Download:1162/330
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Submit date:2011/08/16
Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes
期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 9, 页码: 94009-1-94009-4
Authors:
Ji Xiaoli
;
Yang Fuhua
;
Wang Junxi
;
Duan Ruifei
;
Ding Kai
;
Zeng Yiping
;
Wang Guohong
;
Li Jinmin
Adobe PDF(262Kb)
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View/Download:1188/333
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Submit date:2011/08/16
一种垂直结构氮化物LED的制备方法
专利
专利类型: 发明, 申请日期: 2009-09-30, 公开日期: 4008
Inventors:
段瑞飞
;
王军喜
;
曾一平
;
王国宏
;
李晋闽
Adobe PDF(479Kb)
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View/Download:1157/296
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Submit date:2010/03/19