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Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 8, 页码: 47-51
Authors:  Chen Xiaofeng;  Chen Nuofu;  Wu Jinliang;  Zhang Xiulan;  Chai Chunlin;  Yu Yude
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GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 8, 页码: 881-885
Authors:  沈晓明;  张秀兰;  孙元平;  赵德刚;  冯淦;  张宝顺;  张泽洪;  冯志宏;  杨辉
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GeSi/Si多层异质外延载流子浓度的分布 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 3, 页码: 288
Authors:  张秀兰;  朱文珍;  黄大定
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Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 11, 页码: 1050
Authors:  Lin YX(林燕霞);  Huang DD(黄大定);  Zhang XL(张秀兰);  Liu JP(刘金平);  Li JP(李建平);  Gao F(高飞);  Sun DZ(孙殿照);  Ceng YP(曾一平);  Kong MY(孔梅影)
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