SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions
Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude
2009
Source Publication半导体学报
Volume30Issue:8Pages:47-51
AbstractA GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given.
metadata_83institute of semiconductors,chinese academy of sciences
Subject Area半导体材料
Funding Organizationthe Space Agency of China and the Chinese Academy of Sciences Project
Indexed ByCSCD
Language英语
CSCD IDCSCD:3657109
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15725
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Chen Xiaofeng,Chen Nuofu,Wu Jinliang,et al. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. 半导体学报,2009,30(8):47-51.
APA Chen Xiaofeng,Chen Nuofu,Wu Jinliang,Zhang Xiulan,Chai Chunlin,&Yu Yude.(2009).Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions.半导体学报,30(8),47-51.
MLA Chen Xiaofeng,et al."Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions".半导体学报 30.8(2009):47-51.
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