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Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method
Lin YX(林燕霞); Huang DD(黄大定); Zhang XL(张秀兰); Liu JP(刘金平); Li JP(李建平); Gao F(高飞); Sun DZ(孙殿照); Ceng YP(曾一平); Kong MY(孔梅影)
2000
Source Publication半导体学报
Volume21Issue:11Pages:1050
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:532835
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18747
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Lin YX,Huang DD,Zhang XL,et al. Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method[J]. 半导体学报,2000,21(11):1050.
APA 林燕霞.,黄大定.,张秀兰.,刘金平.,李建平.,...&孔梅影.(2000).Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method.半导体学报,21(11),1050.
MLA 林燕霞,et al."Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method".半导体学报 21.11(2000):1050.
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