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Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
Authors:  X.F. Liu ;   G.G. Yan ;   B. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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