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High-Q and High-extinction-ratio Microdisk Add-drop Filter with Grating Couplers in Silicon-on-Insulator 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
作者:  Li YT (Li Yuntao);  Xiao X (Xiao Xi);  Huang QZ (Huang Qingzhong);  Li ZY (Li Zhiyong);  Yu YD (Yu Yude);  Yu JZ (Yu Jinzhong);  Li, YT, Chinese Acad Sci, Inst Semicond, Natl Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(646Kb)  |  收藏  |  浏览/下载：1950/387  |  提交时间：2010/06/04
Diffractive Grating Based Out-of-Plane Coupling between Silicon Nanowire and Optical Fiber 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
作者:  Li ZY;  Zhu Y;  Zhou L;  Li YT;  Han WH;  Fan ZC;  Yu YD;  Yu JZ;  Li, ZY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(227Kb)  |  收藏  |  浏览/下载：1979/455  |  提交时间：2010/06/04
Characteristics of SOI rib waveguide microring and racetrack resonators 会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
作者:  Huang, QZ;  Xiao, X;  Li, YT;  Yu, YD;  Yu, JZ;  Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(758Kb)  |  收藏  |  浏览/下载：1704/297  |  提交时间：2010/03/09
Resonators  Submicron Rib Waveguides  Silicon-on-insulator  Electron Beam Lithography  
SOI optical switch matrix integrated with spot size converter (SSC) and total internal reflection (TIR) mirrors 会议论文
2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, CANADA, SEP 13-15, 2006
作者:  Yu JZ (Yu Jinzhong);  Chen SW (Chen Shaowu);  Li ZY (Li Zhiyong);  Chen YY (Chen Yuanyuan);  Li YT (Li Yuntao);  Li YP (Li Yanping);  Liu JW (Liu Jingwei);  Yang D (Yang Di);  Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)  |  收藏  |  浏览/下载：2463/692  |  提交时间：2010/03/29
Soi  
Recent progresses of SOI-based photonic devices - art. no. 60201R 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Yu JZ;  Chen SW;  Li ZY;  Chen YY;  Sun F;  Li YT;  Li YP;  Liu JW;  Yang D;  Xia JS;  Li CB;  Wang QM;  Yu, JZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(442Kb)  |  收藏  |  浏览/下载：1723/362  |  提交时间：2010/03/29
Soi  
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Sun XL;  Yang H;  Zhu JJ;  Wang YT;  Chen Y;  Li GH;  Wang ZG;  Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1238/285  |  提交时间：2010/11/15
Gallium Nitride  Luminescence  Bulk  
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Xu DP;  Yang H;  Li JB;  Li SF;  Zhao DG;  Wang YT;  Sun XL;  Wu RH;  Xu DP Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond Beijing 100864 Peoples R China.
Adobe PDF(194Kb)  |  收藏  |  浏览/下载：1146/252  |  提交时间：2010/11/15
Cubic Gan  Buffer Layer  Atomic Force Microscopy  Reflection High-energy Electron Diffraction  Movpe  
Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Liu XF;  Liu JP;  Li JP;  Wang YT;  Li LY;  Sun DZ;  Kong MY;  Lin LY;  Liu XF Chinese Acad Sci Inst Semicond Mat Ctr Beijing 100083 Peoples R China.
收藏  |  浏览/下载：888/0  |  提交时间：2010/11/15
Layers  
The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process 会议论文
NITRIDE SEMICONDUCTORS, 482, BOSTON, MA, DEC 01-05, 1997
作者:  Zheng LX;  Liang JW;  Yang H;  Li JB;  Wang YT;  Xu DP;  Li XF;  Duan LH;  Hu XW;  Zheng LX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(341Kb)  |  收藏  |  浏览/下载：943/211  |  提交时间：2010/10/29
MOVPE growth of GaN and LED on (111) MgAl2O4 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
作者:  Duan SK;  Teng XG;  Wang YT;  Li GH;  Jiang HX;  Han P;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
Adobe PDF(150Kb)  |  收藏  |  浏览/下载：1388/364  |  提交时间：2010/11/15
Gan  Mgal2o4  Movpe  Led  Diodes