Recent progresses of SOI-based photonic devices - art. no. 60201R
Yu JZ; Chen SW; Li ZY; Chen YY; Sun F; Li YT; Li YP; Liu JW; Yang D; Xia JS; Li CB; Wang QM; Yu, JZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
2005
会议名称Conference on Optoelectronic Materials and Devices for Optical Communications
会议录名称Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
页码6020: R201-R201
会议日期NOV 07-10, 2005
会议地点Shanghai, PEOPLES R CHINA
出版地1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者SPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-6051-6
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要SOI (Silicon on Insulator) based photonic devices, including stimulated emission from Si diode, RCE (Resonant Cavity Enhanced) photodiode with quantum structure, MOS (Metal Oxide Semiconductor) optical modulator with high frequency, SOI optical matrix switch and wavelength tunable filter are reviewed in the paper. The emphasis will be played on our recent results of SOI-based thermo-optic waveguide matrix switch with low insertion loss and fast response. A folding re-arrangeable non-blocking 4x4 matrix switch with total internal reflection (TIR) mirrors and a first blocking 16 x 16 matrix were fabricated on SOI wafer. The extinction ratio and the crosstalk are better. The insertion loss and the polarization dependent loss (PDL) at 1.55 mu m increase slightly with longer device length and more bend and intersecting waveguides. The insertion losses are expected to decrease 2-3 dB when anti-reflection films are added in the ends of the devices. The rise and fall times of the devices are 2.1 mu s and 2.3 mu s, respectively.
关键词Soi
学科领域光电子学
主办者SPIE.; Chinese Opt Soc.; China Inst Commun.; Shanghai Jiao Tong Univ.; Alcatel Shanghai Bell.; Shanghai Inst Opt & Fine Mech.; Photon Bridges.; IEEE Commun Soc.; IEEE LEOS.; Opt Soc Amer.; Huawei Technol.
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9900
专题中国科学院半导体研究所(2009年前)
通讯作者Yu, JZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Yu JZ,Chen SW,Li ZY,et al. Recent progresses of SOI-based photonic devices - art. no. 60201R[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2005:6020: R201-R201.
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