SEMI OpenIR

浏览/检索结果: 共5条,第1-5条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices 会议论文
NEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, Hong Kong, PEOPLES R CHINA, JAN 03-08, 2010
作者:  Jin P (Jin P.);  Lv XQ (Lv X. Q.);  Liu N (Liu N.);  Zhang ZY (Zhang Z. Y.);  Wang ZG (Wang Z. G.);  Wang, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: zgwang@red.semi.ac.cn
Adobe PDF(141Kb)  |  收藏  |  浏览/下载:1647/330  |  提交时间:2010/11/01
Superluminescent Diodes  
Solid-state qubit measurement with single electron transistors 会议论文
SOLID-STATE QUANTUM COMPUTING, Taipei, TAIWAN, JUN 23-27, 2008
作者:  Jiao, HJ;  Li, F;  Wang, SK;  Li, XQ;  Jiao, HJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(714Kb)  |  收藏  |  浏览/下载:1748/418  |  提交时间:2010/03/09
Solid-state Qubit  Single-electron-transistor  Quantum Measurement  Number-resolved Master Equation  
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Lei W;  Chen YH;  Jin P;  Xu B;  Ye XL;  Wang ZG;  Huang XQ;  Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)  |  收藏  |  浏览/下载:1433/261  |  提交时间:2010/03/29
Lateral Intersubband Photocurrent  
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang ZY;  Li CM;  Jin P;  Meng XQ;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(47Kb)  |  收藏  |  浏览/下载:1415/302  |  提交时间:2010/10/29
Spectrum  
Stress analysis of silica-based arrayed waveguide grating by a finite element method 会议论文
MATERIALS, DEVICES, AND SYSTEMS FOR DISPLAY AND LIGHTING, 4918, SHANGHAI, PEOPLES R CHINA, OCT 14-18, 2002
作者:  Deng XQ;  Yang QQ;  Wang HJ;  Hu XW;  Wang QM;  Deng XQ Chinese Acad Sci Inst Semicond R&D Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(256Kb)  |  收藏  |  浏览/下载:1234/269  |  提交时间:2010/10/29
Finite Element Method  Stress  Silica Optical Waveguide On silicOn  Birefringence  Optical Wave-guides  Difference Method