| Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices | |
| Jin P (Jin P.); Lv XQ (Lv X. Q.); Liu N (Liu N.); Zhang ZY (Zhang Z. Y.); Wang ZG (Wang Z. G.); Wang, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: zgwang@red.semi.ac.cn | |
| 2010 | |
| 会议名称 | 3rd IEEE International Nanoelectronics Conference |
| 会议录名称 | NEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 |
| 页码 | 304-305 |
| 会议日期 | JAN 03-08, 2010 |
| 会议地点 | Hong Kong, PEOPLES R CHINA |
| 合作性质 | 其它 |
| 出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| 出版者 | IEEE |
| ISBN | 978-1-4244-3543-2 |
| 摘要 | Self-assembled quantum dots (QDs) with broadband emitting spectra, QD superluminescent diodes (SLDs) and external cavity tunable QD laser have been studied. By optimizing growth parameters and sample structure of In As QDs, up to 150-nm photoluminescence width is achieved. High-power In As/GaAs QD-SLDs with the CW output power of 200 mW and the spectral bandwidth of near 60 nm have been obtained at room temperature. In addition, broadband emitting In As/GaAs QD-SLDs are fabricated. The device exhibits properties of 110 nm bandwidth with the centre of 1.1 mu m and above 30 mW output under pulsing injection at room temperature. By using InAs/AlGaAs QDs as active layers, we get SLDs with 142 nm spectral width. Broadband external cavity tunable laser has been constructed by using broad-emitting spectral In As/GaAs QD gain device. Leaving the facets uncoated, a tuning range of 110 nm, which covers the ground state and the first excited state of the QDs, is realized. By the anti-reflectance coating on one facet, which is coupled with the grating, the tuning bandwidth is expanded to near 150 nm. The ground state, the first and second excited states of the QDs contribute to the broad tuning range. |
| 关键词 | Superluminescent Diodes |
| 学科领域 | 半导体材料 |
| 主办者 | City Univ Hong Kong |
| 收录类别 | CPCI（ISTP） |
| 语种 | 英语 |
| 文献类型 | 会议论文 |
| 条目标识符 | http://ir.semi.ac.cn/handle/172111/13897 |
| 专题 | 中科院半导体材料科学重点实验室 |
| 通讯作者 | Wang, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: zgwang@red.semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Jin P ,Lv XQ ,Liu N ,et al. Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2010:304-305. |
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