SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes
Zhang ZY; Li CM; Jin P; Meng XQ; Xu B; Ye XL; Wang ZG; Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
2003
Conference NameSymposium on Quantum Confined Semiconductor Nanostructures held at the 2002 MRS Fall Meeting
Source PublicationQUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737
Pages119-127
Conference DateDEC 02, 2001-DEC 05, 2002
Conference PlaceBOSTON, MA
Publication Place506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
PublisherMATERIALS RESEARCH SOCIETY
ISSN0272-9172
ISBN1-55899-674-5
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
AbstractWe have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.
KeywordSpectrum
Subject Area半导体器件
Funding OrganizationMat Res Soc.; Evident Technol Inc.; IBM TJ Watson Res Ctr.; Los Alamos Natl Lab.; Motorola Inc.; Texas A&M Univ.
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/13619
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Zhang ZY,Li CM,Jin P,et al. Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,2003:119-127.
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