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Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes | |
Zhang ZY; Li CM![]() ![]() ![]() ![]() | |
2003 | |
Conference Name | Symposium on Quantum Confined Semiconductor Nanostructures held at the 2002 MRS Fall Meeting |
Source Publication | QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737 |
Pages | 119-127 |
Conference Date | DEC 02, 2001-DEC 05, 2002 |
Conference Place | BOSTON, MA |
Publication Place | 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA |
Publisher | MATERIALS RESEARCH SOCIETY |
ISSN | 0272-9172 |
ISBN | 1-55899-674-5 |
metadata_83 | chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
Abstract | We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes. |
Keyword | Spectrum |
Subject Area | 半导体器件 |
Funding Organization | Mat Res Soc.; Evident Technol Inc.; IBM TJ Watson Res Ctr.; Los Alamos Natl Lab.; Motorola Inc.; Texas A&M Univ. |
Indexed By | CPCI-S |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/13619 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. |
Recommended Citation GB/T 7714 | Zhang ZY,Li CM,Jin P,et al. Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,2003:119-127. |
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