Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

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	Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes
	Zhang ZY; Li CM; Jin P; Meng XQ; Xu B; Ye XL; Wang ZG; Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
	2003
Conference Name	Symposium on Quantum Confined Semiconductor Nanostructures held at the 2002 MRS Fall Meeting
Source Publication	QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737
Pages	119-127
Conference Date	DEC 02, 2001-DEC 05, 2002
Conference Place	BOSTON, MA
Publication Place	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
Publisher	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-674-5
metadata_83	chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
Abstract	We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.
Keyword	Spectrum
Subject Area	半导体器件
Funding Organization	Mat Res Soc.; Evident Technol Inc.; IBM TJ Watson Res Ctr.; Los Alamos Natl Lab.; Motorola Inc.; Texas A&M Univ.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/13619
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Recommended Citation GB/T 7714	Zhang ZY,Li CM,Jin P,et al. Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,2003:119-127.

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