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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1879/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Liang, LY;  Ye, XL;  Jin, P;  Chen, YH;  Wang, ZG;  Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)  |  收藏  |  浏览/下载：1587/232  |  提交时间：2010/03/09
Induced Refractive-index  Growth  Lasers  Gaas  
Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Geng, MM;  Jia, LX;  Zhang, L;  Yang, L;  Liu, YL;  Li, F;  Geng, MM, Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(607Kb)  |  收藏  |  浏览/下载：1644/309  |  提交时间：2010/03/09
Wave-guides  Devices  Design  
Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test 会议论文
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, Sanya, PEOPLES R CHINA, JAN 06-09, 2008
作者:  Zhou, W;  Yang, JL;  Li, Y;  Yang, FH;  Yang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(267Kb)  |  收藏  |  浏览/下载：1406/372  |  提交时间：2010/03/09
Bulge Test  Fracture Property  Silicon Nitride  Weibull Distribution Function  
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Tang, J;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Wang, XY;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：2001/451  |  提交时间：2010/03/09
Performance  Heterostructures  Optimization  Mobility  
Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Sun, MX;  Tan, MQ;  Zhao, M;  Sun, MX, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(326Kb)  |  收藏  |  浏览/下载：1415/436  |  提交时间：2010/03/09
Antireflective Coatings  Superluminescent Diodes  Double Source Electron Beam Evaporation Technology  
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, FW;  Gao, HY;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Yan, FW, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(1746Kb)  |  收藏  |  浏览/下载：2896/891  |  提交时间：2010/03/09
Gan  Mocvd  Led  Nano-pattern  Sem  Hrxrd  Pl  
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wei, TB;  Duan, RF;  Wang, JX;  Li, JM;  Huo, ZQ;  Zeng, YP;  Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)  |  收藏  |  浏览/下载：1771/511  |  提交时间：2010/03/09
Hvpe  Gan  Nitridation  Polarity  Etching  
Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Gao, HY;  Yan, FW;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Gao, HY, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, A35 Qinghua E Rd, Beijing 100083, Peoples R China.
Adobe PDF(753Kb)  |  收藏  |  浏览/下载：2810/842  |  提交时间：2010/03/09
Pyramidal Patterned Substrate  Ingan/gan  Light-emitting Diode  Wet Etching  
Advances in high power semiconductor diode lasers - art. no. 682402 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Ma, XY;  Zhong, L;  Ma, XY, Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(671Kb)  |  收藏  |  浏览/下载：3085/1103  |  提交时间：2010/03/09
Laser Diodes  Laser Bar  Stacks  High Power  Power Conversion Efficiency  Reliability  Packaging