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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
Authors:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
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In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
Authors:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
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Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 6, 页码: 2269-2272
Authors:  Zhao, YM;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, WS;  Wang, L;  Li, JM;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: ymzhao@semi.ac.cn
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Chemical-vapor-deposition  
Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 6, 页码: 1753-1755
Authors:  Zhao YM (Zhao Yong-Mei);  Sun GS (Sun Guo-Sheng);  Li JY (Li Jia-Ye);  Liu XF (Liu Xing-Fang);  Wang L (Wang Lei);  Zhao WS (Zhao Wan-Shun);  Li JM (Li Jin-Min);  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: ymzhao@semi.ac.cn
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Substrate  
Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
Authors:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
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Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide  
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
Authors:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Zhao, YM (Zhao, Y. M.);  Ning, J (Ning, J.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Li, JM (Li, J. M.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
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Homoepitaxy  4h-sic  Multi-epilayer  Uv Detection  p(+)-pi-n(-)  Ultraviolet Photodetector  Epitaxial-growth  
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
Authors:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Ning, J (Ning, J.);  Zhao, YM (Zhao, Y. M.);  Luo, MC (Luo, M. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
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Avalanche Photodiodes  Area  
Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837
Authors:  Liu XF (Liu Xing-Fang);  Sun GS (Sun Guo-Sheng);  Li JM (Li Jin-Min);  Zhao YM (Zhao Yong-Mei);  Li JY (Li Jia-Ye);  Wang L (Wang Lei);  Zhao WS (Zhao Wan-Shun);  Zeng YP (Zeng Yi-Ping);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. E-mail: liuxf@mail.semi.ac.cn
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Spectroscopy  Growth  Polytypes  Silicon