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Self-assembled GaAs quantum rings by MBE droplet epitaxy 会议论文
Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA, Beijing, PEOPLES R CHINA, JUN 09-11, 2005
作者:  Huang, SS (Huang, Shesong);  Niu, ZC (Niu, Zhichuan);  Xia, JB (Xia, Jianbai);  Huang, SS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(1013Kb)  |  收藏  |  浏览/下载：1311/216  |  提交时间：2010/03/29
Quantum Single Rings  Concentric Quantum Double Rings  Coupled Concentric Quantum Double Ring  Droplet Epitaxy  
Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Gong, M (Gong, Meng);  Fang, ZD (Fang, Zhidan);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Gong, M, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)  |  收藏  |  浏览/下载：1321/288  |  提交时间：2010/03/29
Surface Morphology Evolution  Inas Nanostructures  Island-pit Pairs  Molecular-beam Epitaxy  Quantum Dots  Cooperative Nucleation  Heteroepitaxy  Transition  Islands  Growth  
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Fang, ZD (Fang, Zhidan);  Gong, M (Gong, Meng);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(431Kb)  |  收藏  |  浏览/下载：1646/334  |  提交时间：2010/03/29
Quantum Dots  Photoluminescence  Combination Layer  1.3 Mu-m  Lasers  Inalas  
Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang SB;  Liao XB;  Xu YY;  Hu ZH;  Zeng XB;  Diao HW;  Luo MC;  Kong G;  Zhang SB Chinese Acad Sci Inst Semicond Ctr Condensed State Phys State Key Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(93Kb)  |  收藏  |  浏览/下载：1694/428  |  提交时间：2010/10/29
Polymorphous Silicon  Light-scattering  Thin-films  Si  Microcrystallinity  Absorption  States  
Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2), GUILDFORD, ENGLAND, AUG 05-08, 2002
作者:  Li GH;  Fang ZL;  Su FH;  Ma BS;  Ding K;  Han HX;  Sou IK;  Ge WK;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(179Kb)  |  收藏  |  浏览/下载：1434/261  |  提交时间：2010/11/15
Optical-absorption  Zns-te  Transition  Edge  
Transport properties through quantum dot in a vertical electric field 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
作者:  Li SS;  Xia JB;  Li SS Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(67Kb)  |  收藏  |  浏览/下载：864/208  |  提交时间：2010/11/15
Hole Transport  
Lasing of CdSSe quantum dots in glass spherical microcavity 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
作者:  Lu SL;  Jia R;  Jiang DS;  Li SS;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(91Kb)  |  收藏  |  浏览/下载：1184/267  |  提交时间：2010/11/15
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Niu ZC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(171Kb)  |  收藏  |  浏览/下载：1184/221  |  提交时间：2010/11/15
Crystal Morphology  Quantum Dots  Molecular Beam Epitaxy  Semiconducting Gallium Arsenide  Semiconducting Indium Gallium Arsenide  1.35 Mu-m  Gaas-surfaces  Photoluminescence  Islands  
Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (1), SAPPORO, JAPAN, SEP 24-28, 2000
作者:  Li GH;  Chen Y;  Fung ZL;  Ding K;  Han HX;  Zhou W;  Wang ZG;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(165Kb)  |  收藏  |  浏览/下载：1290/322  |  提交时间：2010/11/15
Hydrostatic-pressure  Photoluminescence  Gaas  Luminescence  Growth  Insb  Gasb  
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun BQ;  Jiang DS;  Pan Z;  Li LH;  Wu RH;  Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)  |  收藏  |  浏览/下载：1151/261  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iiiv Materials  Luminescence  Gaasn