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无权访问的条目 期刊论文
作者:  Zhao FA;  Chen YH;  Ye XL;  Jin P;  Xu B;  Wang ZG;  Zhang CL;  Zhao, FA, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing, Peoples R China. 电子邮箱地址: zhaofa@red.semi.ac.cn
Adobe PDF(478Kb)  |  收藏  |  浏览/下载：1101/242  |  提交时间：2010/03/09
无权访问的条目 期刊论文
作者:  Bian LF;  Jiang D;  Liang XG;  Lu SL;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lfbian@red.semi.ac.cn
Adobe PDF(467Kb)  |  收藏  |  浏览/下载：823/254  |  提交时间：2010/03/09
Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Xu B;  Wang ZG;  Chen YH;  Jin P;  Ye XL;  Liu HY;  Zhang ZY;  Shi GX;  Zhang CL;  Wang YL;  Liu FQ;  Xu, B, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(556Kb)  |  收藏  |  浏览/下载：1368/256  |  提交时间：2010/03/29
Dots  
Design of spectrometer based on volume phase grating for near infrared range 会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:  Li F;  Xin HL;  Cao P;  Liu YL;  Li F Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)  |  收藏  |  浏览/下载：1301/297  |  提交时间：2010/10/29
Spectrometer  Volume Phase Grating  Optical Design  Resolution  
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:  Ying-Qiang X;  Zhang W;  Niu ZC;  Wu RG;  Wang QM;  Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)  |  收藏  |  浏览/下载：1655/495  |  提交时间：2010/10/29
Ganas  Sio2 Encapsulation  Rapid-thermal-annealing  Nitrogen Reorganization  Molecular-beam Epitaxy  Optical-properties  Mu-m  
Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure 会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:  Xu Y;  Zhu XP;  Ye XJ;  Kang XN;  Cao Q;  Guo L;  Chen LH;  Xu Y Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(559Kb)  |  收藏  |  浏览/下载：1721/645  |  提交时间：2010/10/29
Finite-difference Methods  Algainp Laser Diodes  Risa  Operation  Layer  Nm  
无权访问的条目 期刊论文
作者:  Wang SR;  Wang W;  Zhu HL;  Zhao LJ;  Zhang RY;  Zhou F;  Shu HY;  Wang RF;  Wang, SR, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1037/431  |  提交时间：2010/03/09
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文
MICRON, 35 (6), Wuhan, PEOPLES R CHINA, OCT 17-21, 2003
作者:  Luo XH;  Wang RM;  Zhang XP;  Zhang HZ;  Yu DP;  Luo MC;  Wang RM Peking Univ Electron Microscopy Lab Beijing 100871 Peoples R China. 电子邮箱地址: rmwang@pku.edu.cn
Adobe PDF(419Kb)  |  收藏  |  浏览/下载：1432/365  |  提交时间：2010/10/29
Transmission Electron Microscopy  Electron Energy Loss Spectroscopy  Molecular Beam Epitaxy  Gallium Nitride  Chemical-vapor-deposition  Epitaxy  Layer  
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD) 会议论文
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 95-96, BERLIN, GERMANY, SEP 21-26, 2003
作者:  Yu JZ;  Li C;  Cheng BW;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: jzyu@red.semi.ac.cn
Adobe PDF(459Kb)  |  收藏  |  浏览/下载：1180/218  |  提交时间：2010/11/15
Dbr (Distributed Bragg Reflector)  Mqw (Multiple Quantum Wells)  Optical Fiber Communication  Photodiode  Rce-pd (Resonant-cavity-enhanced Photodiode)  Responsivity  Sige/si  Soi  
Study of infrared luminescence from Er-implanted GaN films 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Chen WD;  Song SF;  Zhu JJ;  Wang XL;  Chen CY;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: wdchen@red.semi.ac.cn
Adobe PDF(219Kb)  |  收藏  |  浏览/下载：1308/325  |  提交时间：2010/11/15
Doping  Metalorganic Chemical Vapor Deposition  Molecular Beam Epitaxy  Gallium Compounds  Semiconducting Gallium Compounds  Erbium