Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

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	Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
	Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC; Wang RM Peking Univ Electron Microscopy Lab Beijing 100871 Peoples R China. 电子邮箱地址: rmwang@pku.edu.cn
	2004
会议名称	International Wuhan Symposium on Advanced Electron Microscopy (IWSAEM)
会议录名称	MICRON, 35 (6)
页码	475-480
会议日期	OCT 17-21, 2003
会议地点	Wuhan, PEOPLES R CHINA
出版地	THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
出版者	PERGAMON-ELSEVIER SCIENCE LTD
ISSN	0968-4328
部门归属	peking univ, electron microscopy lab, beijing 100871, peoples r china; peking univ, state key lab mesoscop phys, sch phys, beijing 100871, peoples r china; chinese acad sci, inst semicond res, beijing 100083, peoples r china
摘要	Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.
关键词	Transmission Electron Microscopy Electron Energy Loss Spectroscopy Molecular Beam Epitaxy Gallium Nitride Chemical-vapor-deposition Epitaxy Layer
学科领域	半导体材料
主办者	会议主办方: Wuhan Univ
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13599
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang RM Peking Univ Electron Microscopy Lab Beijing 100871 Peoples R China. 电子邮箱地址: rmwang@pku.edu.cn
推荐引用方式 GB/T 7714	Luo XH,Wang RM,Zhang XP,et al. Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer[C]. THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND:PERGAMON-ELSEVIER SCIENCE LTD,2004:475-480.

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