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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:
Sun, GS
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)
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收藏
  |  
浏览/下载:1664/274
  |  
提交时间:2010/03/09
In-situ Doping
Boron
Aluminum
Memory Effects
Hot-wall Lpcvd
4h-sic
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)
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收藏
  |  
浏览/下载:1883/329
  |  
提交时间:2010/03/09
Gas Sensors
Hemt Structures
Mobility
Temperature
Transistors
Growth
Mocvd
Layer
Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P
会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:
Sun, MX
;
Tan, MQ
;
Zhao, M
;
Sun, MX, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(326Kb)
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收藏
  |  
浏览/下载:1433/436
  |  
提交时间:2010/03/09
Antireflective Coatings
Superluminescent Diodes
Double Source Electron Beam Evaporation Technology
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
;
Yan, FW, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(1746Kb)
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收藏
  |  
浏览/下载:2910/891
  |  
提交时间:2010/03/09
Gan
Mocvd
Led
Nano-pattern
Sem
Hrxrd
Pl
Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
;
Gao, HY, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, A35 Qinghua E Rd, Beijing 100083, Peoples R China.
Adobe PDF(753Kb)
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收藏
  |  
浏览/下载:2838/842
  |  
提交时间:2010/03/09
Pyramidal Patterned Substrate
Ingan/gan
Light-emitting Diode
Wet Etching
Advances in high power semiconductor diode lasers - art. no. 682402
会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:
Ma, XY
;
Zhong, L
;
Ma, XY, Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(671Kb)
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收藏
  |  
浏览/下载:3099/1103
  |  
提交时间:2010/03/09
Laser Diodes
Laser Bar
Stacks
High Power
Power Conversion Efficiency
Reliability
Packaging
A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics
会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:
Wang, LS
;
Zhao, LJ
;
Pan, JQ
;
Zhang, W
;
Wang, H
;
Liang, S
;
Zhu, HL
;
Wang, W
;
Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)
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收藏
  |  
浏览/下载:1420/343
  |  
提交时间:2010/03/09
P-i-n/hbt
Wave-guide
Inp/ingaas
Frequency
Hbt
Combined transparent electrodes for high power GaN-based LEDs with long life time
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Wang, LC
;
Yi, XY
;
Wang, XD
;
Wang, GH
;
Li, JM
;
Wang, LC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1515Kb)
  |  
收藏
  |  
浏览/下载:1329/254
  |  
提交时间:2010/03/09
Light-emitting-diodes
Efficiency
High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Yan, JC
;
Wang, JX
;
Liu, Z
;
Liu, NX
;
Li, JM
;
Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3352Kb)
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收藏
  |  
浏览/下载:1151/217
  |  
提交时间:2010/03/09
Diodes
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Li, Y
;
Yi, XY
;
Wang, XD
;
Guo, JX
;
Wang, LC
;
Wang, GH
;
Yang, FH
;
Zeng, YP
;
Li, JM
;
Li, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(701Kb)
  |  
收藏
  |  
浏览/下载:3995/1521
  |  
提交时间:2010/03/09
Gan
Led
Plasma
Damage
Etch
Icp
Pecvd