A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics
Wang, LS; Zhao, LJ; Pan, JQ; Zhang, W; Wang, H; Liang, S; Zhu, HL; Wang, W; Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
2008
会议名称IEEE PhotonicsGlobal at Singapore
会议录名称2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC)
页码VOLS 1 AND 2: 671-673
会议日期DEC 08-11, 2008
会议地点Singapore, SINGAPORE
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN978-1-4244-3901-0
部门归属[wang, l. s.; zhao, l. j.; pan, j. q.; zhang, w.; wang, h.; liang, s.; zhu, h. l.; wang, w.] chinese acad sci, key lab semicond mat sci, inst semicond, beijing 100083, peoples r china
摘要A new ECTT-DHPT with InGaAsP(lambda=1.55 mu m) as base and InGaAsP(lambda=1.3 mu m) as collector as well as waveguide was designed and fabricated, the DC characteristics reveal that the ECTT-DRPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52A/W and dark current of 70nA (when V-ce=1V) were obtained.
关键词P-i-n/hbt Wave-guide Inp/ingaas Frequency Hbt
学科领域光电子学
主办者IEEE.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/8262
专题中国科学院半导体研究所(2009年前)
通讯作者Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Wang, LS,Zhao, LJ,Pan, JQ,et al. A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1 AND 2: 671-673.
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