中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共9条，第1-9条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
无权访问的条目 期刊论文
作者:  X. Y. Zhou;  R. Zhang;  J. P. Sun;  Y. L. Zou;  D. Zhang;  W. K. Lou;  F. Cheng;  G. H. Zhou;  F. Zhai;  Kai Chang
Adobe PDF(3227Kb)  |  收藏  |  浏览/下载：372/1  |  提交时间：2016/04/08
无权访问的条目 期刊论文
作者:  P. Y. Zhou;  X. F. Wu;  K. Ding;  X. M. Dou;  G. W. Zha;  H. Q. Ni;  Z. C. Niu;  H. J. Zhu;  D. S. Jiang;  C. L. Zhao;  B. Q. Sun
Adobe PDF(1502Kb)  |  收藏  |  浏览/下载：275/4  |  提交时间：2016/03/29
Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)  |  收藏  |  浏览/下载：1387/197  |  提交时间：2010/03/29
Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide  
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Zhao, YM (Zhao, Y. M.);  Ning, J (Ning, J.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Li, JM (Li, J. M.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)  |  收藏  |  浏览/下载：1178/198  |  提交时间：2010/03/29
Homoepitaxy  4h-sic  Multi-epilayer  Uv Detection  p(+)-pi-n(-)  Ultraviolet Photodetector  Epitaxial-growth  
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Ning, J (Ning, J.);  Zhao, YM (Zhao, Y. M.);  Luo, MC (Luo, M. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(209Kb)  |  收藏  |  浏览/下载：1319/273  |  提交时间：2010/03/29
Avalanche Photodiodes  Area  
无权访问的条目 期刊论文
作者:  Ma WQ (Ma W. Q.);  Sun YW (Sun Y. W.);  Yang XJ (Yang X. J.);  Jiang DS (Jiang D. S.);  Chen LH (Chen L. H.);  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wqma@semi.ac.cn
Adobe PDF(528Kb)  |  收藏  |  浏览/下载：1042/292  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Sun GS (Sun G. S.);  Liu XF (Liu X. F.);  Gong QC (Gong Q. C.);  Wang L (Wang L.);  Zhao WS (Zhao W. S.);  Li JY (Li J. Y.);  Zeng YP (Zeng Y. P.);  Li JM (Li J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1168/503  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Zhao C (Zhao C.);  Chen YH (Chen Y. H.);  Zhao M (Zhao Man);  Zhang CL (Zhang C. L.);  Xu B (Xu B.);  Yu LK (Yu L. K.);  Sun J (Sun J.);  Lei W (Lei W.);  Wang ZG (Wang Z. G.);  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: czhao@semi.ac.cn
Adobe PDF(330Kb)  |  收藏  |  浏览/下载：929/292  |  提交时间：2010/04/11
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1283/281  |  提交时间：2010/03/29
4h-sic