SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
Sun, GS (Sun, G. S.); Liu, XF (Liu, X. F.); Gong, QC (Gong, Q. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Li, JY (Li, J. Y.); Zeng, YP (Zeng, Y. P.); Li, JM (Li, J. M.); Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
2006
Conference Name11th Conference on Defects Recognition Imaging and Physics in Semiconductors
Source PublicationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Pages9 (1-3): 275-278
Conference DateSEP 13-19, 2005
Conference PlaceBeijing, PEOPLES R CHINA
Publication PlaceTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
PublisherELSEVIER SCI LTD
ISSN1369-8001
AbstractThe morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china
Keyword4h-sic
Subject Area半导体材料
Indexed ByCPCI(ISTP)
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9998
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorSun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Recommended Citation
GB/T 7714
Sun, GS ,Liu, XF ,Gong, QC ,et al. Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces[C]. THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND:ELSEVIER SCI LTD,2006:9 (1-3): 275-278.
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