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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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GaN-based violet lasers grown on sapphire with a novel facet fabrication method
会议论文
, 中国深圳, 2015
作者:
Yingdong Tian
;
Yun Zhang
;
Jianchang Yan
;
Xiang Chen
;
Yanan Guo
;
Xuecheng Wei
;
Junxi Wang
;
Jinmin Li
Adobe PDF(336Kb)
  |  
收藏
  |  
浏览/下载:1129/5
  |  
提交时间:2016/06/02
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:
Sun, GS
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)
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  |  
浏览/下载:1828/274
  |  
提交时间:2010/03/09
In-situ Doping
Boron
Aluminum
Memory Effects
Hot-wall Lpcvd
4h-sic
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
;
Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)
  |  
收藏
  |  
浏览/下载:2020/307
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
Buffer Layer
Lpcvd
Si based quantum cascade structure: from energy band structures design to materials growth
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Hangzhou, PEOPLES R CHINA, JUN 09-14, 2008
作者:
Yu, JZ
;
Han, GQ
;
Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(458Kb)
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收藏
  |  
浏览/下载:1829/311
  |  
提交时间:2010/03/09
40-Gbps Low Chirp Electroabsorption Modulated Distributed Feedback Laser
会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7219, San Jose, CA, JAN 28-29, 2009
作者:
Cheng YB (Cheng Yuanbing)
;
Pan JQ (Pan Jiaoqing)
;
Wang Y (Wang Yang)
;
Zhao LJ (Zhao Lingjuan)
;
Zhu HL (Zhu Hongliang)
;
Wang W (Wang Wei)
Adobe PDF(261Kb)
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收藏
  |  
浏览/下载:1684/256
  |  
提交时间:2011/07/14
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
;
Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)
  |  
收藏
  |  
浏览/下载:1904/511
  |  
提交时间:2010/03/09
Hvpe
Gan
Nitridation
Polarity
Etching
Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N
会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:
Zhao LJ
;
Zhang J
;
Wang L
;
Cheng YB
;
Pan JQ
;
Liu HB
;
Zhu HL
;
Zhou F
;
Bian J
;
Wang BJ
;
Zhu NH
;
Wei W
;
Zhao, LJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(375Kb)
  |  
收藏
  |  
浏览/下载:2384/579
  |  
提交时间:2010/03/09
Tunable Lasers
On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J
会议论文
OPTOELECTRONIC MATERIALS AND DEVICES II, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:
Shou-Li Z
;
De-Ping X
;
Ya-Li I
;
Hai-Lin C
;
Yin-Zhe C
;
Ang M
;
Ji-He L
;
Jun-Hua G
;
Shou-Li, Z, Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China.
Adobe PDF(431Kb)
  |  
收藏
  |  
浏览/下载:1644/301
  |  
提交时间:2010/03/09
Rce- P-i-n-pd
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Sun, G (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Liu, X (Liu, Xingfang)
;
Zhao, Y (Zhao, Yongmei)
;
Li, J (Li, Jiaye)
;
Wang, L (Wang, Lei)
;
Zhao, W (Zhao, Wanshun)
;
Wang, L (Wang, Liang)
;
Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)
  |  
收藏
  |  
浏览/下载:1609/222
  |  
提交时间:2010/03/29
Polycrystalline 3c-sic
Resonator
Doping
Silicon-carbide
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Zhao, YM (Zhao, Y. M.)
;
Ning, J (Ning, J.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Li, JM (Li, J. M.)
;
Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)
  |  
收藏
  |  
浏览/下载:1262/198
  |  
提交时间:2010/03/29
Homoepitaxy
4h-sic
Multi-epilayer
Uv Detection
p(+)-pi-n(-)
Ultraviolet Photodetector
Epitaxial-growth