On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J

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	On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J
	Shou-Li Z; De-Ping X; Ya-Li I; Hai-Lin C; Yin-Zhe C; Ang M; Ji-He L; Jun-Hua G; Shou-Li, Z, Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China.
	2007
会议名称	Conference on Optoelectronic Materials and Devices II
会议录名称	OPTOELECTRONIC MATERIALS AND DEVICES II
页码	6782: J7820-J7820 Part 1-2
会议日期	NOV 02-05, 2007
会议地点	Wuhan, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-6945-8
部门归属	[shou-li, zhou; ya-li, in] zhejiang univ technol, coll informat engn, hangzhou 310014, peoples r china; [de-ping, xiong] guangdong univ technol, sch phys & optoelect engn, guangzhou 510016, guangdong, peoples r china; [hai-lin, cui; yin-zhe, chong; ang, miao; ji-he, lv] beijing univ posts & telecommun, sch telecommun engn, beijing 100876, peoples r china; [jun-hua, gao] chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.
关键词	Rce- P-i-n-pd
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.; China Inst Commun.; Peoples Govt Wuhan Municipal.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7858
专题	中国科学院半导体研究所（2009年前）
通讯作者	Shou-Li, Z, Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China.
推荐引用方式 GB/T 7714	Shou-Li Z,De-Ping X,Ya-Li I,et al. On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2007:6782: J7820-J7820 Part 1-2.

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