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Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Ye XL;  Chen YH;  Xu B;  Zeng YP;  Wang ZG;  Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1592/258  |  提交时间：2010/10/29
Short-period Superlattices  Raman-scattering  Quantum-wells  Growth  Roughness  Segregation  Alas/gaas  Alas  Gaas  
Self-assembled InAs quantum wires on InP(001) 会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
作者:  Wu J;  Zeng YP;  Sun ZZ;  Lin F;  Xu B;  Wang ZG;  Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(359Kb)  |  收藏  |  浏览/下载：1239/239  |  提交时间：2010/11/15
Short-period Superlattices  Vapor-phase Epitaxy  Gaas  Islands  State  
Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:  Zhou W;  Xu B;  Xu HZ;  Liu FQ;  Liang JB;  Wang ZG;  Zhu ZZ;  Li GH;  Zhou W Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(214Kb)  |  收藏  |  浏览/下载：1480/231  |  提交时间：2010/11/15
Bimodal Distribution  Photoluminescence (Pl)  Quantum-size Effect  Ge  Ensembles  Si(100)  Growth  Shape