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Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 10, 页码: 104007-1-104007-5
Authors:  Rao Lan;  Song Guofeng;  Chen Lianghui
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Two-dimensional quantum well wire semiconductor laser arrays 期刊论文
半导体学报, 1996, 卷号: 17, 期号: 2, 页码: 155
Authors:  Qian Y(钱毅);  Zhang JM(张敬明);  Xu ZT(徐遵图);  Chen LH(陈良惠);  Wang QM(王启明);  Zheng LX(郑联喜);  Hu XW(胡雄伟)
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Low threshold GaAs/AlGaAs double Quantum Well Lasers 期刊论文
半导体学报, 1996, 卷号: 17, 期号: 3, 页码: 236
Authors:  Xu ZT(徐遵图);  Zhang JM(张敬明);  Yang GW(杨国文);  Xu JY(徐俊英);  Xiao JW(肖建伟);  Zheng WH(郑婉华);  Chen LH(陈良惠)
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AlInGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxy 期刊论文
半导体学报, 1997, 卷号: 18, 期号: 4, 页码: 313
Authors:  Yang GW(杨国文);  Xu ZT(徐遵图);  Xu JY(徐俊英);  Zhang JM(张敬明);  Xiao JW(肖建伟);  Chen LH(陈良惠)
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High power 980 nm InGaAs/AlGaAs strained quantum well lasers 期刊论文
Chinese Journal of Lasers, 1999, 卷号: 8, 期号: 5, 页码: 397
Authors:  Yin Tao;  Du Jinyu;  Lian Peng;  Xu Zuntu;  Chen Changhua;  Guo Weiling;  Liu Ying;  Li Shuang;  Gao Guo;  Zou Deshu;  Chen Jianxin;  Shen Guangdi;  Ma Xiaoyu;  Chen Lianghui
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High Efficiency Al-Free 980 nm InGaAs/ InGaAsP/ InGaP Strained Quantum Well Lasers 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 5, 页码: 417
Authors:  Xu ZT(徐遵图);  Yang GW(杨国文);  Zhang JM(张敬明);  Ma XY(马骁宇);  Xu JY(徐俊英);  Shen GD(沈光地);  Chen LH(陈良惠)
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Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 6, 页码: 565-570
Authors:  Wei Xin;  Ma Xiaoyu;  Wang Guohong;  Zhang Guangze;  Zhu Xiaopeng;  Chen Lianghui
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A Single Mode 980nm InGaAs/GaAs/AlGaAs Large Optical Cavity Quantum Well Laser with Low Vertical Divergence Angle 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 4, 页码: 342-346
Authors:  Zhu Xiaopeng;  Xu Zuntu;  Zhang Jingming;  Ma Xiaoyu;  Chen Lianghui
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Tunnel Junction AlGaInP Light Emitting Diode 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 6, 页码: 628-631
Authors:  Wang Guohong;  Shen Guangdi;  Guo Xia;  Gao Guo;  Wei Xin;  Zhang Guangze;  Ma Xiaoyu;  Li Yuzhang;  Chen Lianghui
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Fabrication of Windowed Very-Small-Aperture Laser Diodes 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 11, 页码: 1145-1148
Authors:  Kang Xiangning;  Xu Yun;  Song Guofeng;  Ye Xiaojun;  Chen Lianghui
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High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 9, 页码: 1079-1083
Authors:  Xu Yun;  Cao Qing;  Sun Yongwei;  Ye Xiaojun;  Hou Shihua;  Guo Liang;  Chen Lianghui
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High power AlGaInP laser diodes with zinc-diffused window mirror structure 期刊论文
Chinese Optics Letters, 2004, 卷号: 2, 期号: 11, 页码: 647-649
Authors:  Yun Xu;  Qing Cao;  Xiaopeng Zhu;  Guohua Yang;  Qiaoqiang Gan;  Guofeng Song;  Liang Guo;  Yuzhang Li;  Lianghui Chen
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Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 414-417
Authors:  Yang Hui;  Chen Lianghui;  Zhang Shuming;  Chong Ming;  Zhu Jianjun;  Zhao Degang;  Ye Xiaojun;  Li Deyao;  Liu Zongshun;  Duan Lihong;  Zhao Wei;  Wang Hai;  Shi Yongsheng;  Cao Qing;  Sun Jie;  Chen Jun;  Liu Suying;  Jin Ruiqin;  Liang Junwu
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Effect of Mesa Size on Thermal Characteristics of Vertical-cavity Surface-emitting Lasers 期刊论文
Semiconductor Photonics and Technology, 2005, 卷号: 11, 期号: 3, 页码: 170-173
Authors:  Hou Shihua;  Zhao Ding;  Sun Yongwei;  Tan Manqing;  Chen Lianghui
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Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 499-505
Authors:  Li Deyao;  Huang Yongzhen;  Zhang Shuming;  Zhong Ming;  Ye Xiaojun;  Zhu Jianjun;  Zhao Degang;  Chen Lianghui;  Yang Hui;  Liang Junwu
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High-Power Distributed Feedback Laser Diodes Emitting at 820nm 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 6, 页码: 966-969
Authors:  Fu Shenghui;  Song Guofeng;  Zhong Yuan;  Chen Lianghui
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Analysis of Si/GaAs Bonding Stresses with the Finite Element Method 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 11, 页码: 1906-1910
Authors:  He Guorong;  Yang Guohua;  Zheng Wanhua;  Wu Xuming;  Wang Xiaodong;  Cao Yulian;  Wang Qing;  Chen Lianghui
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Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1274-1277
Authors:  Liu Yuntao;  Song Guofeng;  Chen Lianghui
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NiO removal of Ni/Au Ohmic contact to p-GaN after annealing 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 2, 页码: 101-104
Authors:  Lin Mengzhe;  Cao Qing;  Yan Tingjing;  Zhang Shuming;  Chen Lianghui
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Enhanced infrared absorption of spatially ordered quantum dot arrays 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2007, 卷号: 50, 期号: 2-3, 页码: 162-165
Authors:  Ma WQ;  Sun YW;  Yang XJ;  Chong M;  Jiang DS;  Chen LH;  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wqma@semi.ac.cn
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Quantum Dots