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氮化镓基多波段探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  刘文宝;  孙 苋;  赵德刚;  刘宗顺;  张书明;  朱建军;  杨 辉
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利用光辅助氧化湿法刻蚀Ⅲ族氮化物的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  刘文宝;  孙 苋;  赵德刚;  刘宗顺;  张书明;  朱建军;  杨 辉
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Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films 会议论文
MATERIALS RESEARCH, Chongqing, PEOPLES R CHINA, JUN 09-12, 2008
Authors:  Zhao L;  Lu ZX;  Cheng CJ;  Zhao DG;  Zhu JJ;  Sun BJ;  Qu B;  Zhang XF;  Sun WG;  Zhao, L, Luoyang Optoelect Inst, Luoyang, Peoples R China.
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Alxga1-xn  
First principle study of Mg, Si and Mn co-doped GaN 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 1, 页码: 450-458
Authors:  Xing HY;  Fan GH;  Zhang Y;  Zhao DG;  Fan GH S China Normal Univ Inst Optoelect Mat & Technol Guangzhou 510631 Guangdong Peoples R China. E-mail Address: hy.xing@yahoo.com.cn;  gfan@scnu.edu.cn
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Mg Si And Mn Co-doped Gan  Electronic Structure  T-c  Optical Properties  
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响 期刊论文
物理学报, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:  张爽;  赵德刚;  刘宗顺;  朱建军;  张书明;  王玉田;  段俐宏;  刘文宝;  江德生;  杨辉
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Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 2, 页码: Art. No. 023104
Authors:  Zhang LQ;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Zhang SM;  Yang H;  Zhang LQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: lqzhang@semi.ac.cn;  hyang@red.semi.ac.cn
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Aluminium Compounds  Claddings  Gallium Compounds  Iii-v Semiconductors  Indium Compounds  Quantum Well Lasers  Refractive Index  Waveguide Lasers  
GaN基激光器的特性 期刊论文
红外与激光工程, 2009, 卷号: 38, 期号: 1, 页码: 41-44
Authors:  张立群;  张书明;  江德生;  朱建军;  赵德刚;  杨辉
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Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 卷号: 487, 期号: 1-2, 页码: 400-403
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Guo X;  Liu ZS;  Zhang SM;  Wang YT;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Nitride Materials  
第一性原理研究Mg,Si和Mn共掺GaN 期刊论文
物理学报, 2009, 卷号: 58, 期号: 1, 页码: 450-458
Authors:  邢海英;  范广涵;  章勇;  赵德刚
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以弱p型为有源区的新型p-n结构GaN紫外探测器 期刊论文
物理学报, 2009, 卷号: 58, 期号: 10, 页码: 7255-7260
Authors:  周梅;  赵德刚
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