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Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 31, 期号: 1, 页码: 43-47
Authors:  Cui CX;  Chen YH;  Jin P;  Xu B;  Ren YY;  Zhao C;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Patterned Substrate  Gaas  Molecular Beam Epitaxy  Nucleation Positions  Assembled Quantum Dots  Molecular-beam Epitaxy  Ge Islands  Growth  Surface  Arrays  
Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 33, 期号: 1, 页码: 207-210
Authors:  Yu LK;  Xu B;  Wang ZG;  Chen YH;  Jin P;  Zhao C;  Sun J;  Ding F;  Hu LJ;  Yu, LK, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yulike@red.semi.ac.cn
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Growth Interruption  In Segregation  Surface Oxide  Molecular Beam Epitaxy  Quantum Dots  Molecular-beam Epitaxy  Gaas  Photoluminescence  Layer  Shape  Size  
Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 卷号: 25, 期号: 4, 页码: 592-596
Authors:  Zhang CL;  Xu B;  Wang ZG;  Jin P;  Zhao FA;  Zhang, CL, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangchl@red.semi.ac.cn
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Stress  
A novel method for positioning of InAs islands on GaAs(110) 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 卷号: 28, 期号: 4, 页码: 537-544
Authors:  Cui CX;  Chen YH;  Zhang CL;  Jin P;  Shi GX;  Zhao C;  Xu B;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Inas Island  
InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 卷号: 23, 期号: 1-2, 页码: 31-35
Authors:  Zhao FA;  Wu J;  Jin P;  Xu B;  Wang ZG;  Zhang CL;  Zhao, FA, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: zhaofa@red.semi.ac.cn
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Inas