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Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 卷号: 23, 期号: 5, 页码: 2137-2140
Authors:  Li RY;  Wang ZG;  Xu B;  Jin P;  Guo X;  Chen M;  Li, RY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: ryli@red.semi.ac.cn
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Surface-emitting Lasers  
Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 494-499
Authors:  Zhao FA;  Chen YH;  Ye XL;  Xu B;  Jin P;  Wu J;  Wang ZG;  Zhang CL;  Zhao, FA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaofa@red.semi.ac.cn
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Nanostructures  
Cleaved-edge overgrowth of aligned InAs islands on GaAs(110) 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 11, 页码: 2661-2664
Authors:  Cui CX;  Chen YH;  Zhao C;  Jin P;  Shi GX;  Wang YL;  Xu B;  Wang ZG;  Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Quantum Dots  
Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 卷号: 25, 期号: 4, 页码: 592-596
Authors:  Zhang CL;  Xu B;  Wang ZG;  Jin P;  Zhao FA;  Zhang, CL, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangchl@red.semi.ac.cn
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Stress  
Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 284, 期号: 1-2, 页码: 20-27
Authors:  Lei W;  Chen YH;  Wang YL;  Xu B;  Ye XL;  Zeng YP;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: ahleiwen@red.semi.ac.cn
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Annealing  
Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 8, 页码: 1379-1382
Authors:  Zhang CL;  Wang ZG;  Chen YH;  Cui CX;  Xu B;  Jin P;  Li RY;  Zhang, CL, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Diffusion Length  
The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 276, 期号: 1-2, 页码: 77-82
Authors:  Shi GX;  Xu B;  Jin P;  Ye XL;  Wang YL;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
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Optical Properties  
A novel method for positioning of InAs islands on GaAs(110) 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 卷号: 28, 期号: 4, 页码: 537-544
Authors:  Cui CX;  Chen YH;  Zhang CL;  Jin P;  Shi GX;  Zhao C;  Xu B;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Inas Island  
Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001) 期刊论文
PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, 2005, 卷号: PTS 1-5, 期号: 475-479, 页码: 1897-1900
Authors:  Lei W;  Chen YH;  Wang YL;  Ye XL;  Jin P;  Xu B;  Zeng YP;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: ahleiwen@red.semi.ac.cn
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Polarized Photoluminescence  
Quantum-dot growth simulation on periodic stress of substrate 期刊论文
JOURNAL OF CHEMICAL PHYSICS, 2005, 卷号: 123, 期号: 9, 页码: Art.No.094708
Authors:  Zhao C;  Chen YH;  Cui CX;  Xu B;  Sun J;  Lei W;  Lu LK;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: czhao@semi.ac.cn;  yhchen@red.semi.ac.cn
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Kinetic Monte-carlo