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Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li;  J. Yang;  J. J. Zhu;  Z. S. Liu;  X. J. Li;  W. Liu;  X. Li;  F. Liang;  J. P. Liu;  B. S. Zhang;  H. Yang
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Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  S. T. LIU;  Y. XING;  L. Q. ZHANG;  M. LI;  J. ZHANG
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Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy 期刊论文
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 4, 页码: 045116
Authors:  Y. Jiang;  S. Thapa;  G. D. Sanders;  C. J. Stanton;  Q. Zhang;  J. Kono;  W. K. Lou;  K. Chang;  S. D. Hawkins;  J. F. Klem;  W. Pan;  D. Smirnov;  Z. Jiang
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A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文
ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31
Authors:  X. F. Liu;  z G. G. Yan;  Z. W. Shen;  Z. X.Wen;  L. X. Tian;  W. S. Zhao;  L. Wang;  M. Guan;  F. Zhang;  G. S. Sun;  Y. P. Zeng
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Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B=MgO Injectors with Different MgO Growth Processes 期刊论文
PHYSICAL REVIEW APPLIED, 2017, 卷号: 8, 页码: 054027
Authors:  P. Barate;  S. H. Liang;  T. T. Zhang;  J. Frougier;  B. Xu;  P. Schieffer;  M. Vidal;  H. Jaffrès;  B. Lépine;  S. Tricot;  F. Cadiz;  T. Garandel;  J. M. George;  T. Amand;  X. Devaux;  M. Hehn;  S. Mangin;  B. Tao;  X. F. Han;  Z. G. Wang;  X. Marie;  Y. Lu;  P. Renucci
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Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  W. Liu;  X. Li;  F. Liang;  S. T. Liu;  L. Q. Zhang;  H. Yang
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Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
Authors:  J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG;  P. CHEN;  J. J. ZHU;  Z. S. LIU;  S. T. LIU;  L. Q. ZHANG;  M. LI
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Polarization-independent plasmonic subtractive color filtering in ultrathin Ag nanodisks with high transmission 期刊论文
Applied Optics, 2016, 卷号: 55, 期号: 1, 页码: 148-152
Authors:  X. L. HU;  L. B. SUN;  BEIBEI ZENG;  L. S. WANG;  Z. G. YU;  S. A. BAI;  S. M. YANG;  L. X. ZHAO;  Q. LI;  M. QIU;  R. Z. TAI;  H. J. FECHT;  J. Z. JIANG;  D. X. ZHANG
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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  X. Li;  S. T. Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文
physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228
Authors:  X. Li;  D. G. Zhao*;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  F. Liang;  L. Q. Zhang;  J. P. Liu;  H. Yang
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