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Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B=MgO Injectors with Different MgO Growth Processes 期刊论文
PHYSICAL REVIEW APPLIED, 2017, 卷号: 8, 页码: 054027
Authors:  P. Barate;  S. H. Liang;  T. T. Zhang;  J. Frougier;  B. Xu;  P. Schieffer;  M. Vidal;  H. Jaffrès;  B. Lépine;  S. Tricot;  F. Cadiz;  T. Garandel;  J. M. George;  T. Amand;  X. Devaux;  M. Hehn;  S. Mangin;  B. Tao;  X. F. Han;  Z. G. Wang;  X. Marie;  Y. Lu;  P. Renucci
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Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector 期刊论文
APPLIED PHYSICS LETTERS, 2017, 卷号: 108, 页码: 152404
Authors:  B. S. Tao;  P. Barate;  J. Frougier;  P. Renucci;  B. Xu;  A. Djeffal;  H. Jaffrès;  J.-M. George;  X. Marie;  S. Petit-Watelot;  S. Mangin;  X. F. Han;  Z. G. Wang;  Y. Lu
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The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots 期刊论文
JOURNAL OF OPTICS, 2010, 卷号: 12, 期号: 5, 页码: Art. No. 055203
Authors:  Huang X (Huang X.);  Zhang XH (Zhang X. H.);  Zhu YG (Zhu Y. G.);  Li T (Li T.);  Han LF (Han L. F.);  Shang XJ (Shang X. J.);  Ni HQ (Ni H. Q.);  Niu ZC (Niu Z. C.);  Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xinhuiz@semi.ac.cn
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Inas Quantum Dots  Nonlinear Refraction  Reflection Z-scan  Dc Electric Field Effect  Electrooptic Properties  Saturable Absorber  Optical-properties  Well Structures  Single-beam  Band-gap  Electroabsorption  Absorption  Reflection  Dependence  
波长路由在并行计算机光互连中的应用 期刊论文
高技术通讯, 1997, 卷号: 7, 期号: 10, 页码: 28
Authors:  周革;  张以谟;  井文才;  华锋;  陈炫;  陈弘达;  吴荣汉;  陈志标;  张益
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