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The effect of nanoscale steps on the self-catalyzed position-controlled InAs nanowire growth 期刊论文
Journal of Micromechanics and Microengineering, 2018, 卷号: 28, 页码: 014002
Authors:  Wenyuan Yang ;   Xianghai Ji ;   Xiaoye Wang ;   Tong Li ;   Tuanwei Shi ;  Tao Yang ;   Qing Chen
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Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire 期刊论文
ACS Applied Materials & Interfaces, 2017, 卷号: 9, 页码: 2867−2874
Authors:  Yuxiang Han;  Mengqi Fu;  Zhiqiang Tang;  Xiao Zheng;  Xianghai Ji;  Xiaoye Wang;  Weijian Lin;  Tao Yang;  Qing Chen
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Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates 期刊论文
Journal of Crystal Growth, 2017, 卷号: 460, 页码: 1-4
Authors:  Xiaoye Wang;  Wenyuan Yang;  Baojun Wang;  Xianghai Ji;  Shengyong Xu;  Wei Wang;  Qing Chen;  Tao Yang
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Ultrafast and reversible electrochemical lithiation of InAs nanowires observed by in-situ transmission electron microscopy 期刊论文
Nano Energy, 2016, 卷号: 20, 页码: 194-201
Authors:  Xing Li;  DongdongXiao;  HaoZheng;  XianlongWei;  Xiaoye Wang;  LinGu;  Yong-ShengHu;  TaoYang;  QingChen
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无权访问的条目 学位论文
Authors:  王小耶
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Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays 期刊论文
Nanotechnology, 2015, 卷号: 26, 期号: 26, 页码: 265302
Authors:  Tuanwei Shi;  Xiaoye Wang;  Baojun Wang;  Wei Wang;  Xiaoguang Yang;  Wenyuan Yang;  Qing Chen;  Hongqi Xu;  Shengyong Xu;  Tao Yang
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Study on the response of InAs nanowire transistors to H2O and NO2 期刊论文
Sensors and Actuators B-Chemical Volume, 2015, 卷号: 209, 页码: 456–461
Authors:  Xintong Zhang;  Mengqi Fu;  Xing Li;  Tuanwei Shi;  Zhiyuan Ning;  Xiaoye Wang
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Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate 期刊论文
Crystal Growth & Design, 2015, 卷号: 15, 页码: 2413−2418
Authors:  Wenna Du;  Xiaoguang Yang;  Huayong Pan;  Xiaoye Wang;  Haiming Ji;  Shuai Luo;  Xianghai Ji;  Zhanguo Wang;  Tao Yang
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Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires 期刊论文
RSC Advances, 2013, 期号: 43, 页码: 19834-19839
Authors:  Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai
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硅基高晶体质量InAsSb平面纳米线的生长方法 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  杨涛;  杜文娜;  杨晓光;  王小耶;  季祥海;  王占国
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