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Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate 期刊论文
NANOTECHNOLOGY, 2018, 卷号: 29, 期号: 41, 页码: 415203
Authors:  Wenyuan Yang ;   Dong Pan ;   Rui Shen ;   Xinzhe Wang ;   Jianhua Zhao ;   Qing Chen
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The effect of nanoscale steps on the self-catalyzed position-controlled InAs nanowire growth 期刊论文
Journal of Micromechanics and Microengineering, 2018, 卷号: 28, 页码: 014002
Authors:  Wenyuan Yang ;   Xianghai Ji ;   Xiaoye Wang ;   Tong Li ;   Tuanwei Shi ;  Tao Yang ;   Qing Chen
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Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates 期刊论文
Journal of Crystal Growth, 2017, 卷号: 460, 页码: 1-4
Authors:  Xiaoye Wang;  Wenyuan Yang;  Baojun Wang;  Xianghai Ji;  Shengyong Xu;  Wei Wang;  Qing Chen;  Tao Yang
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Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays 期刊论文
Nanotechnology, 2015, 卷号: 26, 期号: 26, 页码: 265302
Authors:  Tuanwei Shi;  Xiaoye Wang;  Baojun Wang;  Wei Wang;  Xiaoguang Yang;  Wenyuan Yang;  Qing Chen;  Hongqi Xu;  Shengyong Xu;  Tao Yang
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