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Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire 期刊论文
ACS Applied Materials & Interfaces, 2017, 卷号: 9, 页码: 2867−2874
Authors:  Yuxiang Han;  Mengqi Fu;  Zhiqiang Tang;  Xiao Zheng;  Xianghai Ji;  Xiaoye Wang;  Weijian Lin;  Tao Yang;  Qing Chen
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Crystal phase- and orientation-dependent electrical transport properties of InAs nanowires 期刊论文
Nano Letters, 2016, 卷号: 16, 期号: 4, 页码: 2478-2484
Authors:  Mengqi Fu;  Zhiqiang Tang;  Xing Li;  Zhiyuan Ning;  Dong Pan;  Jianhua Zhao;  Xianlong Wei;  Qing Chen
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GaAs基InAs/GaSb超晶格近红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-11-11, 公开日期: 4012
Inventors:  汤宝;  周志强;  郝瑞亭;  任正伟;  徐应强;  牛智川
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一种InAs/GaSb超晶格红外光电探测器及其制作方法 专利
专利类型: 发明, 专利号: CN201010106773.X, 公开日期: 2011-08-30, 2011-07-14, 2011-08-30
Inventors:  王国伟;  汤宝;  周志强;  任正伟;  徐应强;  牛智川
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