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InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition 期刊论文
Nanotechnology, 2016, 卷号: 27, 期号: 27, 页码: 275601
Authors:  Xianghai Ji;  Xiaoguang Yang;  Wenna Du;  Huayong Pan;  Shuai Luo;  Haiming Ji;  H Q Xu;  Tao Yang
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Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts 期刊论文
Nano Lett., 2016, 卷号: 16, 期号: 2, 页码: 877-882
Authors:  Wenna Du;  Xiaoguang Yang;  Huayong Pan;  Xianghai Ji;  Haiming Ji;  Shuai Luo;  Xingwang Zhang;  Zhanguo Wang;  Tao Yang
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Ultrashort pulse and high power mode-locked laser with chirped InAs/InP quantum dot active layers 期刊论文
IEEE Photonics Technology Letters, 2016, 卷号: 28, 期号: 13, 页码: 1481-1484
Authors:  Feng Gao;  Shuai Luo;  Haiming Ji;  Songtao Liu;  Feng Xu;  Zun-Ren Lv;  Dan Lu;  Chen Ji;  Tao Yang
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Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers 期刊论文
IEEE Electron Device Letters, 2016, 卷号: 37, 期号: 9, 页码: 1166 - 1169
Authors:  Yanhua Zhang;  Wenquan Ma;  Jianliang Huang;  Yulian Cao;  Ke Liu;  Wenjun Huang;  Chengcheng Zhao;  Haiming Ji;  Tao Yang
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Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal 期刊论文
Solid State Communications, 2015, 卷号: 224, 页码: 34-36
Authors:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Ke Liu;  Wenjun Huang;  Shuai Luo;  Haiming Ji;  Tao Yang
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Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate 期刊论文
Crystal Growth & Design, 2015, 卷号: 15, 页码: 2413−2418
Authors:  Wenna Du;  Xiaoguang Yang;  Huayong Pan;  Xiaoye Wang;  Haiming Ji;  Shuai Luo;  Xianghai Ji;  Zhanguo Wang;  Tao Yang
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High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability 期刊论文
Optics Letters, 2012, 卷号: 37, 期号: 19, 页码: 4071-4073
Authors:  Cao, Yulian1;  Ji, Haiming2;  Xu, Pengfei2;  Gu, Yongxian2;  Ma, Wenquan1;  Yang, Tao2
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High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability 期刊论文
OPTICS LETTERS, 2012, 卷号: 37, 期号: 19, 页码: 4071-4073
Authors:  Cao YL (Cao, Yulian);  Ji HM (Ji, Haiming);  Xu PF (Xu, Pengfei);  Gu YX (Gu, Yongxian);  Ma WQ (Ma, Wenquan);  Yang T (Yang, Tao)
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高性能1.3 μm InAs/GaAs量子点激光器的研究 学位论文
, 北京: 中国科学院研究生院, 2010
Authors:  季海铭
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生长InP基InAs量子阱的方法 专利
专利类型: 发明, 公开日期: 2013-03-20, 2013-03-20
Inventors:  季海铭;  罗帅;  杨涛
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