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Enhanced Optical Property of InGaN Light-Emitting Diodes with SiO 2 Nano-Bowl Photonic Crystal by Nanosphere Lithography 期刊论文
ECS Solid State Lett., 2013, 卷号: 2, 期号: 7, 页码: Q51-Q53
Authors:  Haiyang Zheng and Kui Wu
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Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 页码: 241107
Authors:  Kui Wu, Tongbo Wei, Ding Lan, Xuecheng Wei, Haiyang Zheng, Yu Chen, Hongxi Lu, Kai Huang, Junxi Wang, Yi Luo, Jinmin Li
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Enhanced Light Emission of InGaN Light-Emitting-Diodes by Nanosphere Lithography Generated Photonic Crystals with Different Geometries 期刊论文
ECS J. Solid State Sci. Technol., 2013, 卷号: 2, 期号: 11, 页码: R241-R244
Authors:  Haiyang Zheng and Kui Wu
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Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal without Electrical Performance Damages 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 卷号: 52, 期号: 4, 页码: 040207
Authors:  Du, Chengxiao;  Geng, Chong;  Zheng, Haiyang;  Wei, Tongbo;  Chen, Yu;  Zhang, Yiyun;  Wu, Kui;  Yan, Qingfeng;  Wang, Junxi;  Li, Jinmin
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Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 5, 页码: 054009
Authors:  Zheng, Huaiwen;  Zhang, Yiyun;  Yang, Hua;  Xue, Bin;  Wu, Kui;  Li, Jing;  Wang, Guohong
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Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography 期刊论文
Applied Physics Letters, 2012, 卷号: 101, 期号: 21, 页码: 211111
Authors:  Wei, Tongbo;  Wu, Kui;  Lan, Ding;  Yan, Qingfeng;  Chen, Yu;  Du, Chengxiao;  Wang, Junxi;  Zeng, Yiping;  Li, Jinmin
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Monolithic Integration of MQW DFB Laser and EA Modulator in 1.55μm 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 5, 页码: 412
Authors:  Yan XJ(颜学进);  Xu GY(许国阳);  Zhu HL(朱洪亮);  Zhou F(周帆);  Wang XJ(汪孝杰);  Zhang JY(张静媛);  Tian HL(田慧良);  Ma CH(马朝华);  Shu HY(舒惠云);  Bai YX(白云霞);  Bi KK(毕可奎);  Wu RH(吴荣汉);  Wang QM(王启明);  Wang W(王圩)
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氧化铟锡透明导电薄膜表面粗化方法 专利
专利类型: 发明, 专利号: CN102244159A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  郑怀文;  张逸韵;  吴奎;  杨华;  李璟
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低位错氮化镓的生长方法 专利
专利类型: 发明, 专利号: CN102409406A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  吴奎;  魏同波;  闫建昌;  刘喆;  王军喜;  李晋闽
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一种紫外LED的制作方法 专利
专利类型: 发明, 专利号: CN102148300A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  贠利君;  吴奎;  刘乃鑫;  刘喆;  王军喜
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