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GaAs/Si低温直接键合技术研究 学位论文
, 北京: 中国科学院大学, 2017
Authors:  刘雨生
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Gaas/si  直接键合  低温  等离子体活化  
硅基III-V族半导体材料的外延生长及量子点激光器研究 学位论文
, 北京: 中国科学院研究生院, 2016
Authors:  刘广政
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Gaas/si  Gaas/ge  两步法  四步法  量子点  激光器  
Si基III-V族半导体异质兼容低维材料的分子束外延生长 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  贺继方
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Si基iii-v族半导体  Inas/gaas量子点  半导体纳米线  自催化生长  分子束外延  
Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO2/TiAu/SiO2 structure 期刊论文
SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2011, 卷号: 54, 期号: 4, 页码: 830-834
Authors:  Bai YM;  Wang J;  Wang Y;  Zhang H;  Chen NF;  Yao JX;  Huang TM;  Wang YS;  Zhang XW;  Wu JL;  Bai, YM, N China. Elect Power Univ, New & Renewable Energy Beijing Key Lab, Beijing 102206, Peoples R China. ymbai@semi.ac.cn
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Micro-solar Cell  Si-gaas  Leakage Current  Insulating Layer  Perimeter Recombination  
Photoluminescence behaviors from stoichiometric gadolinium oxide films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 94, 期号: 7, 页码: 4414-4419
Authors:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Chen NF;  Lin LY;  Zhou JP,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Interfacial Layer Formation  Gate Dielectrics Gd2o3  Ion-beam  Temperature-dependence  Silicon  Si  Gaas(100)  Constants  Europium  Yttrium  
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
Authors:  Zhang ZC;  Yang SY;  Zhang FQ;  Xu B;  Zeng YP;  Chen YH;  Wang ZG;  Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Dislocation  Interfaces  Strain  Molecular Beam Epitaxy  Semiconductor Iiiv Materials  Molecular-beam Epitaxy  Surface-morphology  Technology  Gaas(001)  Behavior  Si  
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2002, 卷号: 45, 期号: 3, 页码: 255-260
Authors:  Sun YP;  Fu Y;  Qu B;  Wang YT;  Feng ZH;  Shen XM;  Zhao DG;  Zheng XH;  Duan LH;  Li BC;  Zhang SM;  Yang H;  Sun YP,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China. 电子邮箱地址: ypsun@red.semi.ac.cn
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Wafer Bonding  Cubic  Gan/gaas(001)  Si-substrate  Light-emitting-diodes  P-type Gan  Resistance  Contact  Laser  
Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 10, 页码: 5444-5446
Authors:  Shen WZ;  Jiang LF;  Yu G;  Lai ZY;  Wang XG;  Shen SC;  Cao X;  Shen WZ,Shanghai Jiao Tong Univ,Dept Phys,Lab Condensed Matter Spect & Optoelect Phys,1954 Hua Shan Rd,Shanghai 200030,Peoples R China.
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Far-infrared Detectors  Si-doped Gaas  Photoluminescence  Layers  
The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 卷号: 19, 期号: 1, 页码: 15-18
Authors:  Chen YB;  Jiang DS;  Wang RZ;  Zheng HJ;  Sun BQ;  Chen YB,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Surface Photovoltaic Spectroscopy  Si-gaas  Nondetructive Technique  Undoped Semiinsulating Gaas  
The effect of dopant Si on the uniformity of self-organized InAs quantum dots 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 1999, 卷号: 18, 期号: 6, 页码: 423-426
Authors:  Wang HL;  Zhu HJ;  Li Q;  Ning D;  Wang H;  Wang XD;  Deng YM;  Feng SL;  Wang HL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Self-organized Quantum Dots  Pl  Si-doping  Inas/gaas