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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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GaAs/Si低温直接键合技术研究
学位论文
, 北京: 中国科学院大学, 2017
Authors:
刘雨生
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View/Download:446/38
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Submit date:2017/06/01
Gaas/si
直接键合
低温
等离子体活化
硅基III-V族半导体材料的外延生长及量子点激光器研究
学位论文
, 北京: 中国科学院研究生院, 2016
Authors:
刘广政
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View/Download:920/92
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Submit date:2016/06/03
Gaas/si
Gaas/ge
两步法
四步法
量子点
激光器
Si基III-V族半导体异质兼容低维材料的分子束外延生长
学位论文
, 北京: 中国科学院研究生院, 2012
Authors:
贺继方
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View/Download:1178/136
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Submit date:2012/06/15
Si基iii-v族半导体
Inas/gaas量子点
半导体纳米线
自催化生长
分子束外延
Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO2/TiAu/SiO2 structure
期刊论文
SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2011, 卷号: 54, 期号: 4, 页码: 830-834
Authors:
Bai YM
;
Wang J
;
Wang Y
;
Zhang H
;
Chen NF
;
Yao JX
;
Huang TM
;
Wang YS
;
Zhang XW
;
Wu JL
;
Bai, YM, N China. Elect Power Univ, New & Renewable Energy Beijing Key Lab, Beijing 102206, Peoples R China. ymbai@semi.ac.cn
Adobe PDF(752Kb)
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View/Download:1722/373
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Submit date:2011/07/05
Micro-solar Cell
Si-gaas
Leakage Current
Insulating Layer
Perimeter Recombination
Photoluminescence behaviors from stoichiometric gadolinium oxide films
期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 94, 期号: 7, 页码: 4414-4419
Authors:
Zhou JP
;
Chai CL
;
Yang SY
;
Liu ZK
;
Song SL
;
Chen NF
;
Lin LY
;
Zhou JP,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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View/Download:1182/387
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Submit date:2010/08/12
Interfacial Layer Formation
Gate Dielectrics Gd2o3
Ion-beam
Temperature-dependence
Silicon
Si
Gaas(100)
Constants
Europium
Yttrium
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
Authors:
Zhang ZC
;
Yang SY
;
Zhang FQ
;
Xu B
;
Zeng YP
;
Chen YH
;
Wang ZG
;
Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(165Kb)
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View/Download:962/340
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Submit date:2010/08/12
Dislocation
Interfaces
Strain
Molecular Beam Epitaxy
Semiconductor Iiiv Materials
Molecular-beam Epitaxy
Surface-morphology
Technology
Gaas(001)
Behavior
Si
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate
期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2002, 卷号: 45, 期号: 3, 页码: 255-260
Authors:
Sun YP
;
Fu Y
;
Qu B
;
Wang YT
;
Feng ZH
;
Shen XM
;
Zhao DG
;
Zheng XH
;
Duan LH
;
Li BC
;
Zhang SM
;
Yang H
;
Sun YP,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China. 电子邮箱地址: ypsun@red.semi.ac.cn
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View/Download:1494/382
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Submit date:2010/08/12
Wafer Bonding
Cubic
Gan/gaas(001)
Si-substrate
Light-emitting-diodes
P-type Gan
Resistance
Contact
Laser
Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces
期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 10, 页码: 5444-5446
Authors:
Shen WZ
;
Jiang LF
;
Yu G
;
Lai ZY
;
Wang XG
;
Shen SC
;
Cao X
;
Shen WZ,Shanghai Jiao Tong Univ,Dept Phys,Lab Condensed Matter Spect & Optoelect Phys,1954 Hua Shan Rd,Shanghai 200030,Peoples R China.
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View/Download:1317/357
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Submit date:2010/08/12
Far-infrared Detectors
Si-doped Gaas
Photoluminescence
Layers
The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy
期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 卷号: 19, 期号: 1, 页码: 15-18
Authors:
Chen YB
;
Jiang DS
;
Wang RZ
;
Zheng HJ
;
Sun BQ
;
Chen YB,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
Adobe PDF(281Kb)
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Submit date:2010/08/12
Surface Photovoltaic Spectroscopy
Si-gaas
Nondetructive Technique
Undoped Semiinsulating Gaas
The effect of dopant Si on the uniformity of self-organized InAs quantum dots
期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 1999, 卷号: 18, 期号: 6, 页码: 423-426
Authors:
Wang HL
;
Zhu HJ
;
Li Q
;
Ning D
;
Wang H
;
Wang XD
;
Deng YM
;
Feng SL
;
Wang HL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
Adobe PDF(126Kb)
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Submit date:2010/08/12
Self-organized Quantum Dots
Pl
Si-doping
Inas/gaas