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Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文
NANOTECHNOLOGY, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
Authors:  Chen YH;  Jin P;  Liang LY;  Ye XL;  Wang ZG;  Martinez AI;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail:
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Scanning-tunneling-microscopy  Anisotropy Spectroscopy  Growth  Gaas  Surfaces  Alas