SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
Chen YH; Jin P; Liang LY; Ye XL; Wang ZG; Martinez AI; Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
2006
Source PublicationNANOTECHNOLOGY
ISSN0957-4484
Volume17Issue:9Pages:2207-2211
AbstractThe wetting layer (WL) in InAs/GaAs quantum-dot systems has been studied by reflectance difference spectroscopy (RDS). Two structures related to the heavy-hole (HH) and light-hole (LH) related transitions in the WL have been observed. On the basis of a calculation model that takes into account the segregation effect and exciton binding energies, the amount of InAs in the WL (t(WL)) and its segregation coefficient ( R) have been determined from the HH and LH transition energies. The evolutions of tWL and R exhibit a close relation to the growth modes. Before the formation of InAs dots, t(WL) increases linearly from similar to 1 to similar to 1.6 monolayer (ML), while R increases almost linearly from similar to 0.8 to similar to 0.85. After the onset of dot formation, t(WL) is saturated at similar to 1.6 ML and R decreases slightly from 0.85 to 0.825. The variation of tWL can be interpreted by using an equilibrium model. Different variations of in-plane optical anisotropy before and after dot formation have been observed.
metadata_83chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; natl autonomous univ mexico, inst phys, mexico city 04510, df, mexico
KeywordScanning-tunneling-microscopy Anisotropy Spectroscopy Growth Gaas Surfaces Alas
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-04-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10598
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorChen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Recommended Citation
GB/T 7714
Chen YH,Jin P,Liang LY,et al. Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy[J]. NANOTECHNOLOGY,2006,17(9):2207-2211.
APA Chen YH.,Jin P.,Liang LY.,Ye XL.,Wang ZG.,...&Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn.(2006).Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy.NANOTECHNOLOGY,17(9),2207-2211.
MLA Chen YH,et al."Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy".NANOTECHNOLOGY 17.9(2006):2207-2211.
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