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Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang
2016
Source PublicationJournal of Vacuum Science & Technology B
Volume34Issue:1Pages:011206
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27871
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. Yang,D. G. Zhao,D. S. Jiang,et al. Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes[J]. Journal of Vacuum Science & Technology B,2016,34(1):011206.
APA J. Yang.,D. G. Zhao.,D. S. Jiang.,P. Chen.,J. J. Zhu.,...&H. Yang.(2016).Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes.Journal of Vacuum Science & Technology B,34(1),011206.
MLA J. Yang,et al."Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes".Journal of Vacuum Science & Technology B 34.1(2016):011206.
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