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Deep ultraviolet light-emitting diodes with improved performance via nanoporous AlGaN template 期刊论文
Optics Express, 2019, 卷号: 27, 期号: 4, 页码: 4917-4926
Authors:  L. Zhang;   Y. N. Guo;   J. C. Yan;   Q. Q. Wu;   X. C. Wei;   J. X. Wang;   J. M. Li
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Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications 期刊论文
AIP Advances, 2016, 卷号: 6, 期号: 2, 页码: 025324
Authors:  R. W. Wu;  G. D. Yuan;  K. C. Wang;  T. B. Wei;  Z. Q. Liu;  G. H. Wang;  J. X. Wang;  J. M. Li
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Electron delocalization in gate-tunable gapless silicene 期刊论文
Phys. Rev. B, 2013, 卷号: 88, 页码: 125431
Authors:  Yan-Yang Zhang, Wei-Feng Tsai, Kai Chang, X. -T. An, G. -P. Zhang, X. -C. Xie, Shu-Shen Li
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Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 11, 页码: 113509
Authors:  Shi K (Shi K.);  Zhang PF (Zhang P. F.);  Wei HY (Wei H. Y.);  Jiao CM (Jiao C. M.);  Jin P (Jin P.);  Liu XL (Liu X. L.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Wang ZG (Wang Z. G.)
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Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire 期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 卷号: 157, 期号: 7, 页码: H721-H726
Authors:  Wei TB (Wei T. B.);  Hu Q (Hu Q.);  Duan RF (Duan R. F.);  Wei XC (Wei X. C.);  Yang JK (Yang J. K.);  Wang JX (Wang J. X.);  Zeng YP (Zeng Y. P.);  Wang GH (Wang G. H.);  Li JM (Li J. M.);  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. 电子邮箱地址: tbwei@semi.ac.cn
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Atomic Force Microscopy  
Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks 期刊论文
PHYSICS LETTERS A, 2010, 卷号: 374, 期号: 47, 页码: 4793-4796
Authors:  Ning JQ (Ning J. Q.);  Xu SJ (Xu S. J.);  Wei ZF (Wei Z. F.);  Ruan XZ (Ruan X. Z.);  Ji Y (Ji Yang);  Zheng HZ (Zheng H. Z.);  Liu HC (Liu H. C.);  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址: sjxu@hkucc.hku.hk
Adobe PDF(305Kb)  |  Favorite  |  View/Download:1525/536  |  Submit date:2010/12/05
Optical Kerr Effect  Electron Spin  Quantum Disks  Inas/gaas  Refractive-index  Coherence  Gaas  Semiconductors  
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Authors:  Liu JM (Liu J. M.);  Liu XL (Liu X. L.);  Xu XQ (Xu X. Q.);  Wang J (Wang J.);  Li CM (Li C. M.);  Wei HY (Wei H. Y.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Fan YM (Fan Y. M.);  Zhang XW (Zhang X. W.);  Wang ZG (Wang Z. G.)
Adobe PDF(278Kb)  |  Favorite  |  View/Download:1253/348  |  Submit date:2010/08/17
Valence Band Offset  W-inn/h-bn Heterojunction  X-ray Photoelectron Spectroscopy  Conduction Band Offset  Valence Band Offset  Negative Electron-affinity  Indium Nitride  Wurtzite Gan  Surface  Film  Aln  Transport  Emission  Naxwo3  Growth  
The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文
SOLID STATE COMMUNICATIONS, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994
Authors:  Song HP (Song H. P.);  Zheng GL (Zheng G. L.);  Yang AL (Yang A. L.);  Guo Y (Guo Y.);  Wei HY (Wei H. Y.);  Li CM (Li C. M.);  Yang SY (Yang S. Y.);  Liu XL (Liu X. L.);  Zhu QS (Zhu Q. S.);  Wang ZG (Wang Z. G.);  Song, HP, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: songhp@semi.ac.cn;  xlliu@semi.ac.cn
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Zno  In2o3  Mocvd  Photoelectron Spectroscopies  In2o3-zno Films  Transparent  Oxide  Semiconductors  Inn  
A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes 期刊论文
APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 卷号: 97, 期号: 2, 页码: 465-468
Authors:  Ding K (Ding, K.);  Zeng YP (Zeng, Y. P.);  Wei XC (Wei, X. C.);  Li ZC (Li, Z. C.);  Wang JX (Wang, J. X.);  Lu HX (Lu, H. X.);  Cong PP (Cong, P. P.);  Yi XY (Yi, X. Y.);  Wang GH (Wang, G. H.);  Li JM (Li, J. M.);  Ding, K, Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dingkai@red.semi.ac.cn
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Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Authors:  Zhang PF (Zhang, P. F.);  Liu XL (Liu, X. L.);  Wei HY (Wei, H. Y.);  Fan HB (Fan, H. B.);  Liang ZM (Liang, Z. M.);  Jin P (Jin, P.);  Yang SY (Yang, S. Y.);  Jiao CM (Jiao, C. M.);  Zhu QS (Zhu, Q. S.);  Wang ZG (Wang, Z. G.);  Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangpanf@semi.ac.cn;  xlliu@semi.ac.cn
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Chemical-vapor-deposition